|
|
PDF BSH111 Data sheet ( Hoja de datos )
| Número de pieza | BSH111 | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSH111 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
3
3 drain (d)
12
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 44 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 2.5 V; ID = 75 mA;
Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 500 mA;
Figure 7 and 8
Tj = 25 °C
VGS = 1.8 V; ID = 75 mA;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
gfs forward transconductance VDS = 10 V; ID = 200 mA;
Figure 11
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
ton
toff
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
ID = 0.5 A; VDS = 44 V;
VGS = 8 V; Figure 14
VGS = 0 V; VDS = 10 V;
f = 1 MHz; Figure 12
VDD = 50 V; RD = 250 Ω;
VGS = 10 V; RG = 50 Ω;
RGS = 50 Ω
Min Typ Max Unit
55 75 -
50 -
-
V
V
0.4 1.0 1.3 V
0.3 - - V
- - 2.5 V
-
0.01 1.0
µA
- - 10 µA
- 10 100 nA
-
2.4 5
Ω
- - 7.4 Ω
-
2.3 4
Ω
- 3.1 8
100 380 -
- 1.0 -
- 0.05 -
- 0.5 -
- 17 40
- 7 30
- 4 10
- 4 10
- 11 15
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
9397 750 09629
Product data
Rev. 02 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
02 20020426 -
01 20000807 -
Description
Product data (9397 750 09629)
Modifications
• VGS data updated.
Product specification; initial version.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSH111.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSH111 | N-channel enhancement mode field-effect transistor | NXP Semiconductors |
| BSH112 | N-channel enhancement mode field-effect transistor | NXP Semiconductors |
| BSH114 | N-channel enhancement mode field effect transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |