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BUK7275-100A PDF даташит

Спецификация BUK7275-100A изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS standard level FET».

Детали детали

Номер произв BUK7275-100A
Описание N-channel TrenchMOS standard level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BUK7275-100A Даташит, Описание, Даташиты
BUK7275-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 17 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 13 A;
Tj = 175 °C; see Figure 12;
see Figure 13
VGS = 10 V; ID = 13 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
ID = 14 A; Vsup 100 V;
RGS = 50 ; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 21.7 A
- - 89 W
- - 187 m
- 64 75 m
- - 100 mJ









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BUK7275-100A Даташит, Описание, Даташиты
NXP Semiconductors
BUK7275-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT428 (DPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7275-100A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK7275-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 13









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BUK7275-100A Даташит, Описание, Даташиты
NXP Semiconductors
BUK7275-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
Tmb = 100 °C; VGS = 10 V; see Figure 1
IDM
peak drain current
Tmb = 25 °C; tp 10 µs; pulsed;
[1]
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
ID = 14 A; Vsup 100 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Peak drain current is limited by chip, not package.
Min Typ Max Unit
- - 100 V
- - 100 V
-20 -
20 V
- - 21.7 A
- - 15.4 A
- - 87 A
--
-55 -
-55 -
89 W
175 °C
175 °C
- - 21.7 A
- - 87 A
- - 100 mJ
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03aa16
40 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7275-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
3 of 13










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Номер в каталогеОписаниеПроизводители
BUK7275-100AN-channel TrenchMOS standard level FETNXP Semiconductors
NXP Semiconductors

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