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BUK7628-100A PDF даташит

Спецификация BUK7628-100A изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS standard level FET».

Детали детали

Номер произв BUK7628-100A
Описание N-channel TrenchMOS standard level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BUK7628-100A Даташит, Описание, Даташиты
BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 30 A; Vsup 25 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 47 A
- - 166 W
- 20 28 m
- - 45 mJ









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BUK7628-100A Даташит, Описание, Даташиты
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7628-100A
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 13









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BUK7628-100A Даташит, Описание, Даташиты
NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 100 °C
Tmb = 25 °C
Tmb = 25 °C; pulsed
Tmb = 25 °C
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; Tmb = 25 °C
ID = 30 A; Vsup 25 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 33 A
- 47 A
- 187 A
- 166 W
-55 175 °C
-55 175 °C
- 47 A
- 187 A
- 45 mJ
100
Pder
(%)
80
60
40
20
0
0
003aaf147
50 100 150 200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0 50
VGS 5 V
003aaf150
100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 13










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BUK7628-100AN-channel TrenchMOS standard level FETNXP Semiconductors
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