BUK7628-100A PDF даташит
Спецификация BUK7628-100A изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS standard level FET». |
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Детали детали
Номер произв | BUK7628-100A |
Описание | N-channel TrenchMOS standard level FET |
Производители | NXP Semiconductors |
логотип |
13 Pages
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BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 30 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 47 A
- - 166 W
- 20 28 mΩ
- - 45 mJ
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NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7628-100A
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
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NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 100 °C
Tmb = 25 °C
Tmb = 25 °C; pulsed
Tmb = 25 °C
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; Tmb = 25 °C
ID = 30 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 33 A
- 47 A
- 187 A
- 166 W
-55 175 °C
-55 175 °C
- 47 A
- 187 A
- 45 mJ
100
Pder
(%)
80
60
40
20
0
0
003aaf147
50 100 150 200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0 50
VGS ≥ 5 V
003aaf150
100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
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Номер в каталоге | Описание | Производители |
BUK7628-100A | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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