BUK7613-100E PDF даташит
Спецификация BUK7613-100E изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS standard level FET». |
|
Детали детали
Номер произв | BUK7613-100E |
Описание | N-channel TrenchMOS standard level FET |
Производители | NXP Semiconductors |
логотип |
13 Pages
No Preview Available ! |
BUK7613-100E
N-channel TrenchMOS standard level FET
5 October 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 72 A
- - 182 W
-
10.2 13
mΩ
- 25.4 35.6 nC
Scan or click this QR code to view the latest information for this product
No Preview Available ! |
NXP Semiconductors
BUK7613-100E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7613-100E
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Marking
Table 4. Marking codes
Type number
BUK7613-100E
Marking code
BUK7613-100E
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj
BUK7613-100E
junction temperature
All information provided in this document is subject to legal disclaimers.
Product data sheet
5 October 2012
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 72 A
- 51 A
- 288 A
- 182 W
-55 175 °C
-55 175 °C
© NXP B.V. 2012. All rights reserved
2 / 13
No Preview Available ! |
NXP Semiconductors
BUK7613-100E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
- 72 A
- 288 A
ID = 72 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1][2]
-
121 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
80
003aah630
120
ID
(A) Pder
(%)
60
80
03aa16
40
40
20
0
0 50 100 150Tmb(°C) 200
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7613-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
3 / 13
Скачать PDF:
[ BUK7613-100E.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BUK7613-100E | N-channel TrenchMOS standard level FET | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |