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PDF AO6402A Data sheet ( Hoja de datos )
| Número de pieza | AO6402A | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO6402A
30V N-Channel MOSFET
General Description
The AO6402A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Product Summary
VDS (V) = 30V
ID = 7.5A
RDS(ON) < 24mΩ
RDS(ON) < 35mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
TSOP6
Top View
Bottom View
Top View
D1
D2
G3
6D
5D
4S
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
7.5
6.0
64
2.0
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
54
Max
62.5
110
68
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO6402A
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
Rg
DUT
+
Vdd
VDC
-
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO6402A.PDF ] | |
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