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C1345 PDF даташит

Спецификация C1345 изготовлена ​​​​«Renesas» и имеет функцию, называемую «NPN Transistor - 2SC1345».

Детали детали

Номер произв C1345
Описание NPN Transistor - 2SC1345
Производители Renesas
логотип Renesas логотип 

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C1345 Даташит, Описание, Даташиты
2SC1345
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0687-0300
(Previous ADE-208-1052A)
Rev.3.00
Sep.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
55
50
5
100
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 6









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C1345 Даташит, Описание, Даташиты
2SC1345
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*1
VBE
VCE(sat)
fT
Cob
Min
55
50
5
250
Noise figure
NF —
Note: 1. The 2SC1345 is grouped by hFE as follows.
DEF
250 to 500 400 to 800 600 to 1200
(Ta = 25°C)
Typ Max Unit
Test conditions
— — V IC = –10 µA, IE = 0
— — V IC = 1 mA, RBE =
— — V IE = 10 µA, IC = 0
— 0.5 µA VCB =18 V, IE = 0
— 0.5 µA VEB = 2 V, IC = 0
— 1200
VCE = 12 V, IC = 2 mA
— 0.75 V VCE = 12 V, IC = 2 mA
— 0.5
V IC = 10 mA, IB = 1 mA
230 — MHz VCE = 12 V, IC = 2 mA
— 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
— 8 dB VCE = 6 V, IC = 0.1 mA,
f = 10 Hz, Rg = 10 k
— 1 dB VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 10 k
Small Signal h Parameters
Item
Input impedance
Voltage feedback ratio
Current transfer ratio
Output admittance
(VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter common)
Symbol
D
E
F Unit
hie 110 170 240 k
hre 9.5 14.5 16 × 10–4
hfe 340 540 825
hoe 12.0 12.5 13.5
µS
Rev.3.00 Aug 10, 2005 page 2 of 6









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C1345 Даташит, Описание, Даташиты
2SC1345
Main Characteristics
Maximum Collector Dissipation Curve
250
200
150
100
50
0 50 100 150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
700
VCE = 12 V
600
500
Ta = 75°C
400 25
300
200
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 50
Collector Current IC (mA)
Base to Emitter Voltage vs. Ambient
Temperature
0.9
0.8
VCE = 12 V
IC = 2 mA
0.7
0.6
0.5
0.4
-20
0
20 40 60 80
Ambient Temperature Ta (°C)
Typical Output Characteristics
P
10
26
24
22
C = 200 mW
8 20
18
6 16
14
12
4 10
8
2
6
4
2 µA
IB = 0
0 4 8 12 16 20 24
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
5
VCE = 12 V
4
3
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
10
IE = 0
f= 1 MHz
5
2
1
12
5 10
Collector to Base Voltage VCB (V)
Rev.3.00 Aug 10, 2005 page 3 of 6










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