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PDF BUK765R2-40B Data sheet ( Hoja de datos )
| Número de pieza | BUK765R2-40B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 40 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3;
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 203 W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 494 mJ
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C; see
Figure 14
- 16 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
- 4.4 5.2 mΩ
[1] Continuous current is limited by package.
1 page  
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from minimum footprint; mounted on a
junction to ambient
printed-circuit board
Min Typ Max Unit
- - 0.74 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1 0.1
0.05
0.02
03nj25
10-2
single shot
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK765R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BUK765R2-40B_2
Modifications:
20090116
Product data sheet
-
BUK75_765R2_40B-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK765R2-40B separated from data sheet BUK75_765R2_40B-01.
• Package outline updated.
BUK75_765R2_40B-01 20030514
Product data sheet
-
-
BUK765R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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