DataSheet26.com

BUK764R3-40B PDF даташит

Спецификация BUK764R3-40B изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «TrenchMOS logic level FET».

Детали детали

Номер произв BUK764R3-40B
Описание TrenchMOS logic level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

15 Pages
scroll

No Preview Available !

BUK764R3-40B Даташит, Описание, Даташиты
BUK75/764R3-40B
TrenchMOS™ standard level FET
Rev. 01 — 09 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK754R3-40B in SOT78 (TO-220AB)
BUK764R3-40B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S 961 mJ
s ID 75 A
s RDSon = 3.8 m(typ)
s Ptot 254 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s









No Preview Available !

BUK764R3-40B Даташит, Описание, Даташиты
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IDR reverse drain current (DC)
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
peak reverse drain current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Tmb = 25 °C; pulsed; tp 10 µs
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 10 V; RGS = 50 ;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min
-
-
-
[1] -
[2] -
[2] -
-
-
55
55
[1] -
[2] -
-
-
Max Unit
40 V
40 V
±20 V
176 A
75 A
75 A
706 A
254
+175
+175
W
°C
°C
176 A
75 A
706 A
961 mJ
9397 750 11133
Product data
Rev. 01 — 09 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 15









No Preview Available !

BUK764R3-40B Даташит, Описание, Даташиты
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
120
Pder
(%)
80
40
03na19
200
ID
(A)
150
03nk47
100
50 Capped at 75 A due to package
0
0 50 100 150 200
Tmb C)
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0 50
VGS 10 V
100 150 200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
03nk45
tp = 10 µ s
100 µ s
1 ms
10 ms
DC
100 ms
1
10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11133
Product data
Rev. 01 — 09 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3 of 15










Скачать PDF:

[ BUK764R3-40B.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BUK764R3-40BTrenchMOS logic level FETNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск