BUK7Y7R6-40E PDF даташит
Спецификация BUK7Y7R6-40E изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel 40V 7.6m standard level MOSFET». |
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Детали детали
Номер произв | BUK7Y7R6-40E |
Описание | N-channel 40V 7.6m standard level MOSFET |
Производители | NXP Semiconductors |
логотип |
13 Pages
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BUK7Y7R6-40E
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
20 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 32 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 40 V
- - 79 A
- - 94.3 W
- 5.5 7.6 mΩ
- 8.2 - nC
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NXP Semiconductors
BUK7Y7R6-40E
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7Y7R6-40E
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK7Y7R6-40E
Marking code
77E640
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
BUK7Y7R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 February 2013
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 79 A
- 56 A
- 317 A
- 94.3 W
-55 175 °C
© NXP B.V. 2013. All rights reserved
2 / 13
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NXP Semiconductors
BUK7Y7R6-40E
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
-
ID = 79 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1][2]
-
79 A
317 A
43 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
80
003aai730
120
ID
(A) Pder
(%)
60
80
03aa16
40
40
20
0
0 50 100 150 Tmb(°C)200
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7Y7R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 February 2013
© NXP B.V. 2013. All rights reserved
3 / 13
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Номер в каталоге | Описание | Производители |
BUK7Y7R6-40E | N-channel 40V 7.6m standard level MOSFET | NXP Semiconductors |
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