DataSheet26.com

BUK6E2R0-30C PDF даташит

Спецификация BUK6E2R0-30C изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS intermediate level FET».

Детали детали

Номер произв BUK6E2R0-30C
Описание N-channel TrenchMOS intermediate level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

15 Pages
scroll

No Preview Available !

BUK6E2R0-30C Даташит, Описание, Даташиты
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 7 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 16
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 120 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 30 V
[1] - - 120 A
- - 306 W
- 1.9 2.2 m
- - 1.7 J









No Preview Available !

BUK6E2R0-30C Даташит, Описание, Даташиты
NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D Drain
S source
D mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
BUK6E2R0-30C
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
2 of 15









No Preview Available !

BUK6E2R0-30C Даташит, Описание, Даташиты
NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj 25 °C; Tj 175 °C
[1][2]
[3][4]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 3
[5]
[5]
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
[5]
ID = 120 A; Vsup 30 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[6][7][8]
Min
-
-16
-20
-
-
-
-
-55
-55
-
-
-
-
[1] DC
[2] -16V accumulated duration not to exceed 168 hrs.
[3] Pulsed
[4] Accumulated pulse duration not to exceed 5mins.
[5] Continuous current is limited by package.
[6] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[7] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[8] Refer to application note AN10273 for further information.
Max
30
16
20
120
120
1082
Unit
V
V
V
A
A
A
306 W
175 °C
175 °C
120 A
1082 A
1.7 J
-J
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
3 of 15










Скачать PDF:

[ BUK6E2R0-30C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BUK6E2R0-30CN-channel TrenchMOS intermediate level FETNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск