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PDF BUK9E04-30B Data sheet ( Hoja de datos )
| Número de pieza | BUK9E04-30B | |
| Descripción | TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9E04-30B
TrenchMOS™ logic level FET
Rev. 01 — 14 November 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 1.3 J
s ID ≤ 75 A
s RDSon = 3.4 mΩ (typ)
s Ptot ≤ 254 W.
2. Pinning information
Table 1: Pinning - SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base,
connected to
drain (d)
Symbol
d
g
MBB076
s
123
MBK112
SOT226 (I2-PAK)
1 page  
Philips Semiconductors
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A
VGS = 10 V; ID = 25 A
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 5 V; VDD = 24 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
from drain lead 6 mm from
package to center of die
from upper edge of drain
mounting base to center of
die
Ls internal source inductance from source lead to source
bond pad
BUK9E04-30B
TrenchMOS™ logic level FET
Min Typ Max Unit
30 - - V
27 - - V
1.1 1.5 2
V
0.5 - - V
- - 2.3 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
-
3.4 4
mΩ
- - 7.6 mΩ
- - 4.4 mΩ
-
2.7 3
mΩ
- 56 - nC
- 10 - nC
- 22 - nC
-
4 895
6 526
pF
-
1 257
1 508
pF
- 527 721 pF
- 30 - ns
- 76 - ns
- 236 - ns
- 143 - ns
- 4.5 - nH
- 2.5 - nH
- 7.5 - nH
9397 750 12108
Product data
Rev. 01 — 14 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
8. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
01 20031114 -
Product data (9397 750 12108)
BUK9E04-30B
TrenchMOS™ logic level FET
9397 750 12108
Product data
Rev. 01 — 14 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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