BUK952R4-40C PDF даташит
Спецификация BUK952R4-40C изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS logic level FET». |
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Детали детали
Номер произв | BUK952R4-40C |
Описание | N-channel TrenchMOS logic level FET |
Производители | NXP Semiconductors |
логотип |
13 Pages
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BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 11 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tj = 25 °C;
see Figure 1 and 4
- - 40 V
[1][2] - - 100 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
- - 333 W
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 100 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
QGD gate-drain charge
Static characteristics
VGS = 5 V; ID = 25 A;
VDS = 32 V; see Figure 14
- 73 - nC
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12, 11
and 13
- 2.1 2.4 mΩ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.
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NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
BUK952R4-40C
N-channel TrenchMOS logic level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
BUK952R4-40C
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Avalanche ruggedness
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; see Figure 1
VGS = 5 V; Tj = 100 °C; see Figure 1
VGS = 5 V; Tj = 25 °C; see Figure 1 and 4
Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4
Tmb = 25 °C; see Figure 2
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
Min
-
-
-15
[1] -
[2][3] -
[2][3] -
-
-
-55
-55
-
[4][5] -
[6]
Max
40
40
15
270
100
100
1080
333
175
175
1.2
Unit
V
V
V
A
A
A
A
W
°C
°C
J
-J
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
2 of 13
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BUK952R4-40C
N-channel TrenchMOS logic level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
tp ≤ 10 μs; pulsed; Tmb = 25 °C
[1] Current is limited by chip power dissipation rating.
[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Min
[2][3] -
-
Max Unit
100
1080
A
A
300
003aac267
120
ID Pder
(A) (%)
200 80
03na19
100
(1)
40
0
0 50 100 150 200
Tmb (°C)
VGS 5V
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100
Pder =
Ptot
P t o t (25°C )
× 100 %
150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
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Номер в каталоге | Описание | Производители |
BUK952R4-40C | N-channel TrenchMOS logic level FET | NXP Semiconductors |
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