DataSheet26.com

BUK952R4-40C PDF даташит

Спецификация BUK952R4-40C изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS logic level FET».

Детали детали

Номер произв BUK952R4-40C
Описание N-channel TrenchMOS logic level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

13 Pages
scroll

No Preview Available !

BUK952R4-40C Даташит, Описание, Даташиты
BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 11 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
VGS = 5 V; Tj = 25 °C;
see Figure 1 and 4
- - 40 V
[1][2] - - 100 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
- - 333 W
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 100 A; Vsup 40 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
QGD gate-drain charge
Static characteristics
VGS = 5 V; ID = 25 A;
VDS = 32 V; see Figure 14
- 73 - nC
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12, 11
and 13
- 2.1 2.4 mΩ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.









No Preview Available !

BUK952R4-40C Даташит, Описание, Даташиты
NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
BUK952R4-40C
N-channel TrenchMOS logic level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
BUK952R4-40C
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Avalanche ruggedness
Tj 25 °C; Tj 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; see Figure 1
VGS = 5 V; Tj = 100 °C; see Figure 1
VGS = 5 V; Tj = 25 °C; see Figure 1 and 4
Tmb = 25 °C; tp 10 μs; pulsed; see Figure 4
Tmb = 25 °C; see Figure 2
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID = 100 A; Vsup 40 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
Min
-
-
-15
[1] -
[2][3] -
[2][3] -
-
-
-55
-55
-
[4][5] -
[6]
Max
40
40
15
270
100
100
1080
333
175
175
1.2
Unit
V
V
V
A
A
A
A
W
°C
°C
J
-J
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
2 of 13









No Preview Available !

BUK952R4-40C Даташит, Описание, Даташиты
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
tp 10 μs; pulsed; Tmb = 25 °C
[1] Current is limited by chip power dissipation rating.
[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Min
[2][3] -
-
Max Unit
100
1080
A
A
300
003aac267
120
ID Pder
(A) (%)
200 80
03na19
100
(1)
40
0
0 50 100 150 200
Tmb (°C)
VGS • 5V
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100
Pder =
Ptot
P t o t (25°C )
× 100 %
150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
3 of 13










Скачать PDF:

[ BUK952R4-40C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BUK952R4-40CN-channel TrenchMOS logic level FETNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск