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BUK6213-30C PDF даташит

Спецификация BUK6213-30C изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS intermediate level FET».

Детали детали

Номер произв BUK6213-30C
Описание N-channel TrenchMOS intermediate level FET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BUK6213-30C Даташит, Описание, Даташиты
BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drives
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 11
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 47 A; Vsup 30 V;
drain-source avalanche RGS = 50 ; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 30 V
- - 47 A
- - 60 W
- 11.9 14 m
- - 30 mJ
- 4.77 - nC









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BUK6213-30C Даташит, Описание, Даташиты
NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT428 (DPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK6213-30C
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 14









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BUK6213-30C Даташит, Описание, Даташиты
NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj 25 °C; Tj 175 °C
Pulsed
DC
[1]
[2]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
ID = 47 A; Vsup 30 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[3][4][5]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
[1] Accumulated pulse duration not to exceed 5 mins.
[2] Accumulated pulse duration not to exceed 168 hrs
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
Max Unit
30 V
20 V
16 V
47 A
33 A
189 A
60 W
175 °C
175 °C
47 A
189 A
30 mJ
- mJ
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
3 of 14










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