BUK6213-30C PDF даташит
Спецификация BUK6213-30C изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel TrenchMOS intermediate level FET». |
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Детали детали
Номер произв | BUK6213-30C |
Описание | N-channel TrenchMOS intermediate level FET |
Производители | NXP Semiconductors |
логотип |
14 Pages
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BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drives
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 11
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 47 A; Vsup ≤ 30 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 30 V
- - 47 A
- - 60 W
- 11.9 14 mΩ
- - 30 mJ
- 4.77 - nC
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NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT428 (DPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK6213-30C
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
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NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Pulsed
DC
[1]
[2]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C
tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 47 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[3][4][5]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
[1] Accumulated pulse duration not to exceed 5 mins.
[2] Accumulated pulse duration not to exceed 168 hrs
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
Max Unit
30 V
20 V
16 V
47 A
33 A
189 A
60 W
175 °C
175 °C
47 A
189 A
30 mJ
- mJ
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
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