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PDF BUK763R9-60E Data sheet ( Hoja de datos )
| Número de pieza | BUK763R9-60E | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK763R9-60E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 100 A
- - 263 W
- 2.94 3.9 mΩ
- 33 - nC
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BUK763R9-60E
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
QGD gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf fall time
LD
internal drain
from upper edge of mounting base to
inductance
centre of die
LS
internal source
measured from source lead to source
inductance
bond pad
Min Typ Max Unit
60 - - V
54 - - V
2.4 3 4 V
1- - V
- - 4.5 V
-
0.07 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- 2.94 3.9 mΩ
- - 8.5 mΩ
- 103 - nC
- 25.1 - nC
- 33 - nC
- 5609 7480 pF
- 737 884 pF
- 455 624 pF
- 25.3 - ns
- 41.4 - ns
- 62.7 - ns
- 45 - ns
- 2.5 - nH
- 7.5 - nH
BUK763R9-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
5 / 12
5 Page 
NXP Semiconductors
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
8.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK763R9-60E
N-channel TrenchMOS standard level FET
BUK763R9-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
11 / 12
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