BUK761R8-30C Datasheet PDF - NXP Semiconductors
| Part Number | BUK761R8-30C | |
| Description | N-channel TrenchMOS standard level FET | |
| Manufacturers | NXP Semiconductors | |
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BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
175 °C rated
Standard level compatible
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 4
[1][2] - - 100 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
- - 333 W
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 and
13
- 1.5 1.8 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 100 A; Vsup ≤ 30 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C
- - 1.7 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
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NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-a)
thermal resistance
from junction to
ambient
mounted on printed circuit board;
minimum footprint
-
50 -
K/W
Rth(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5
- - 0.45 K/W
1
Zth(j-mb) δ = 0.5
(K/W)
10-1
0.2
0.1
10-2
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
003aab340
P δ = tp
T
tp
T
10-1 tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 μA; VGS = 0 V;
Tj = 25 °C
ID = 250 μA; VGS = 0 V;
Tj = -55 °C
30 -
27 -
-
-
VGSth
gate-source threshold ID = 1 mA; VDS = VGS;
voltage
Tj = -55 °C; see Figure 10
- - 4.4
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 11 and
10
1
-
-
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
3
4
see Figure 11 and 10
Unit
V
V
V
V
V
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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