SEMIX171KH16S PDF даташит
Спецификация SEMIX171KH16S изготовлена «Semikron International» и имеет функцию, называемую «Rectifier Thyr./Diode Module». |
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Детали детали
Номер произв | SEMIX171KH16S |
Описание | Rectifier Thyr./Diode Module |
Производители | Semikron International |
логотип |
4 Pages
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SEMiX171KH16s
SEMiX®1s
Rectifier Thyr./Diode Module
SEMiX171KH16s
Preliminary Data
Features
Terminal height 17 mm
Chips soldered directly to isolated
substrate
Typical Applications
Input Bridge Rectifier for
AC/DC motor control
power supply
Absolute Maximum Ratings
Symbol Conditions
Chip
IT(AV)
ITSM
i2t
i2t
VRSM
VRRM
VDRM
(di/dt)cr
(dv/dt)cr
Tj
Module
Tstg
Visol
sinus 180°
10 ms
10 ms
Tj = 130 °C
Tj = 130 °C
AC sinus 50Hz
Tc = 85 °C
Tc = 100 °C
Tj = 25 °C
Tj = 130 °C
Tj = 25 °C
Tj = 130 °C
1 min
1s
Characteristics
Symbol Conditions
Chip
VT
VT(TO)
rT
IDD;IRD
tgd
tgr
tq
IH
IL
VGT
IGT
VGD
IGD
Rth(j-c)
Rth(j-c)
Rth(j-c)
Tj = 25 °C, IT = 500 A
Tj = 130 °C
Tj = 130 °C
Tj = 130 °C, VDD = VDRM; VRD = VRRM
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
VD = 0.67 * VDRM
Tj = 130 °C
Tj = 25 °C
Tj = 25 °C, RG = 33 Ω
Tj = 25 °C, d.c.
Tj = 25 °C, d.c.
Tj = 130 °C, d.c.
Tj = 130 °C, d.c.
per thyristor
per diode
sin. 180°
per thyristor
per diode
per thyristor
per diode
Module
Rth(c-s)
Ms
Mt
a
w
per module
to heat sink (M5)
to terminals (M6)
Values
170
125
5400
4800
146
115
1700
1600
1600
200
1000
-40 ... 130
-40 ... 125
4000
4800
Unit
A
A
A
A
kA2s
kA2s
V
V
V
A/µs
V/µs
°C
°C
V
V
min.
2
150
3
2.5
typ. max. Unit
1.6 V
0.85 V
1.5 mΩ
60 mA
1 µs
2 µs
µs
150 400 mA
300 1000 mA
V
mA
0.25 V
10 mA
K/W
K/W
0.18 K/W
0.18 K/W
K/W
K/W
K/W
0.075 K/W
5 Nm
5 Nm
5 * 9,81 m/s2
145 g
KH
© by SEMIKRON
Rev. 1 – 09.12.2008
1
No Preview Available ! |
SEMiX171KH16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 1 – 09.12.2008
© by SEMIKRON
No Preview Available ! |
SEMiX171KH16s
Fig. 4L: Power dissipation of three modules vs. direct
current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
© by SEMIKRON
Fig. 8: Surge overload current vs. time
Rev. 1 – 09.12.2008
3
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SEMIX171KH16S | Rectifier Thyr./Diode Module | Semikron International |
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