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PDF MFIRF7N60 Data sheet ( Hoja de datos )
| Número de pieza | MFIRF7N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Global Semiconductor | |
| Logotipo |  |
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MFIRF7N60
MCIRF7N60
ID = 7.0A
VDS = 600V
RDS(on)MAX = 1.2Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 7.0 A
IDM 28.0 A
VDS 600 V
VGS
TJ
T storage
±30
150
-55 ~150
V
℃
℃
POWER MOSFET
Description/ Features
The MCIRF7N60 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
● 150℃ Tj operation
● Low Power Loss & Low cost
●Fast Switching
●RoHS Compliant
Case Styles
Ordering Information
Part Number
MCIRF7N60
MFIRF7N60
1、 GATE
2、 DRAIN
3、 SOURCE
Package
TO-220
TO-220F
1、 GATE
2、 DRAIN
3、 SOURCE
Packaging
Tube
Tube
1 of 7
1 page  
Characteristics Curve
MFIRF7N60
MCIRF7N60
Figure7.Gate Charge Waveform
Figure8.Source-Drain Diode
Figure9.Breakdown Voltage Vs Junction
www.globalsemi-group.com
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MFIRF7N60.PDF ] | |
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