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AT25DF321A PDF даташит

Спецификация AT25DF321A изготовлена ​​​​«ATMEL Corporation» и имеет функцию, называемую «32-Megabit 2.7-volt MinimumSPI Serial Flash Memory».

Детали детали

Номер произв AT25DF321A
Описание 32-Megabit 2.7-volt MinimumSPI Serial Flash Memory
Производители ATMEL Corporation
логотип ATMEL Corporation логотип 

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AT25DF321A Даташит, Описание, Даташиты
Features
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
– Supports RapidS® Operation
– Supports Dual-Input Program and Dual-Output Read
Very High Operating Frequencies
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (tV) of 5 ns Maximum
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– 64 Sectors of 64-Kbytes Each
Hardware Controlled Locking of Protected Sectors via WP Pin
Sector Lockdown
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
128-Byte Programmable OTP Security Register
Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
Program and Erase Suspend/Resume
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (208-mil wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
32-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF321A
Preliminary
1. Description
The AT25DF321A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF321A, with its erase granularity as small as
4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
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AT25DF321A Даташит, Описание, Даташиты
The physical sectoring and the erase block sizes of the AT25DF321A have been optimized to
meet the needs of today's code and data storage applications. By optimizing the size of the
physical sectors and erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their
own protected sectors, the wasted and unused memory space that occurs with large sectored
and large block erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added while
still maintaining the same overall device density.
The AT25DF321A also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually pro-
tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while
keeping the remaining sectors of the memory array securely protected. This is useful in applica-
tions where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant
modifications to the program code segments. In addition to individual sector protection capabili-
ties, the AT25DF321A incorporates Global Protect and Global Unprotect features that allow the
entire memory array to be either protected or unprotected all at once. This reduces overhead
during the manufacturing process since sectors do not have to be unprotected one-by-one prior
to initial programming.
To take code and data protection to the next level, the AT25DF321A incorporates a sector lock-
down mechanism that allows any combination of individual 64-Kbyte sectors to be locked down
and become permanently read-only. This addresses the need of certain secure applications that
require portions of the Flash memory array to be permanently protected against malicious
attempts at altering program code, data modules, security information, or encryption/decryption
algorithms, keys, and routines. The device also contains a specialized OTP (One-Time Pro-
grammable) Security Register that can be used for purposes such as unique device
serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3-volt systems, the AT25DF321A supports read, program, and
erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for
programming and erasing.
2 AT25DF321A [Preliminary]
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AT25DF321A Даташит, Описание, Даташиты
AT25DF321A [Preliminary]
2. Pin Descriptions and Pinouts
Table 2-1. Pin Descriptions
Symbol
CS
SCK
SI (SIO)
SO (SOI)
WP
Name and Function
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted,
the device will be deselected and normally be placed in standby mode (not Deep Power-
Down mode), and the SO pin will be in a high-impedance state. When the device is
deselected, data will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation
such as a program or erase cycle, the device will not enter the standby mode until the
completion of the operation.
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the
flow of data to and from the device. Command, address, and input data present on the SI pin
is always latched in on the rising edge of SCK, while output data on the SO pin is always
clocked out on the falling edge of SCK.
SERIAL INPUT (SERIAL INPUT/OUTPUT): The SI pin is used to shift data into the device.
The SI pin is used for all data input including command and address sequences. Data on the
SI pin is always latched in on the rising edge of SCK.
With the Dual-Output Read Array command, the SI pin becomes an output pin (SIO) to allow
two bits of data (on the SO and SIO pins) to be clocked out on every falling edge of SCK. To
maintain consistency with SPI nomenclature, the SIO pin will be referenced as SI throughout
the document with exception to sections dealing with the Dual-Output Read Array command
in which it will be referenced as SIO.
Data present on the SI pin will be ignored whenever the device is deselected (CS is
deasserted).
SERIAL OUTPUT (SERIAL OUTPUT/INPUT): The SO pin is used to shift data out from the
device. Data on the SO pin is always clocked out on the falling edge of SCK.
With the Dual-Input Byte/Page Program command, the SO pin becomes an input pin (SOI)
to allow two bits of data (on the SOI and SI pins) to be clocked in on every rising edge of
SCK. To maintain consistency with SPI nomenclature, the SOI pin will be referenced as SO
throughout the document with exception to sections dealing with the Dual-Input Byte/Page
Program command in which it will be referenced as SOI.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please
refer to “Protection Commands and Features” on page 21 for more details on protection
features and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected
to VCC whenever possible.
Asserted
State
Type
Low Input
- Input
- Input/Output
- Output/Input
Low Input
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