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NCE55H12 PDF даташит

Спецификация NCE55H12 изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE55H12
Описание N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE55H12 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE55H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =55V,ID =120A
RDS(ON) < 5.5m@ VGS=10V
(Typ:4.1m)
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE55H12
NCE55H12
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
55
±20
120
85
420
200
1.33
1100
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE55H12 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE55H12
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.75 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
55 65
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=55V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23 4V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=40A
VDS=25V,ID=40A
- 4.1 5.5 m
50 - - S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 4900 -
- 470 -
PF
PF
Crss
- 460 -
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 20 - nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
VDD=30V,ID=2A VGS=10V,RGEN=2.5
-
-
19
70
-
-
nS
nS
tf - 30 - nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 125 -
- 24 -
- 49 -
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2 V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS - - 120 A
trr
Qrr
Tj=25,IF=75A,di/dt=100A/μs (Note3)
-
-
37
58
-
-
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=28V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE55H12 Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE55H12
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.2










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