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T1M5F-A PDF даташит

Спецификация T1M5F-A изготовлена ​​​​«Lite-On» и имеет функцию, называемую «Sensitive Gate Triacs».

Детали детали

Номер произв T1M5F-A
Описание Sensitive Gate Triacs
Производители Lite-On
логотип Lite-On логотип 

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T1M5F-A Даташит, Описание, Даташиты
LITE-ON
SEMICONDUCTOR
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110 )
Commutating di/dt of 1.6 Amps/msec at 110
High Surge Current of 12 Amps
Pb-Free Package
T1M5F-A SERIES
TRIACs
1.0 AMPERES RMS
400 thru 600 VOLTS
TO-92 (TO-226AA)
TO-92
DIM. MIN. MAX.
A 4.45 4.70
B 4.32 5.33
C 3.18 4.19
D 1.15 1.39
E 2.42 2.66
F 12.7 ------
G 2.04 2.66
H 2.93 -----
I 3.43 -----
All Dimensions in millimeter
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
MAXIMUM RATINGS (Tj= 25 unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open)
T1M5F400A
T1M5F600A
Symbol
VDRM,
VRRM
Value
400
600
Unit
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = 50 )
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25 )
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t 2.0us ,Tc = 80 )
Average Gate Power (Tc = 80 , t 8.3 ms )
Peak Gate Current ( t 2.0us ,Tc = 80 )
Peak Gate Voltage ( t 2.0us ,Tc = 80 )
Operating Junction Temperature Range
Storage Temperature Range
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
IT(RMS)
1.0 Amp
ITSM
2
It
12.0
Amps
0.60
2
As
PGM
5.0 Watt
PG(AV)
0.1 Watt
IGM 1.0 Amp
VGM
5.0 Volts
TJ -40 to +110
Tstg -40 to +150
REV. 2, Jun-2005, KTXD11









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T1M5F-A Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Lead
- Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
RthJL
RthJC
RthJA
TL
Value
60
75
150
260
Unit
/W
ELECTRICAL CHARACTERISTICS (Tc=25 unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(VD=Rated VDRM and VRRM; Gate OPen)
Tj =25
Tj =110
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM=± 1A Peak @Tp 2.0 ms, Duty Cycle
2%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc; RL = 100 Ohms)
Holding Current (VD = 12 V, Initiating Current = ± 200 mA,
Gate Open)
Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc; RL =100 Ohms)
Latching Current (VD=12V,IG= 10 mA)
Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 )
IDRM
IRRM
---- ---- 10 uA
---- ---- 100 uA
VTM
IGT1
IGT2
IGT3
IGT4
IH
tgt
VGT1
VGT2
VGT3
VGT4
IL1
IL2
IL3
IL4
VGD
---- ---- 1.9 Volts
---- ---- 5.0
----
----
----
----
5.0
5.0
mA
---- ---- 7.0
---- 1.5 10 mA
---- 2 ---- us
---- 0.66 2.0
----
----
0.77
0.84
2.0
2.0
Volts
---- 0.88 2.5
---- 1.6 15
---- 10.5 20
---- 1.5 15
---- 2.5 15
mA
0.1 ---- ---- Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110 )
Repetitive Critical Rate of Rise of On-State Current
Pulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hz
Rate of Change of Commutating Current (V D = 400 V, I TM = .84 A,
Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110° C, f = 250 Hz,
with Snubber)
dv/dt
di/dt
di/dt(c)
20 60 ---- V/us
---- ---- 10 A/us
1.6 ---- ---- A/ms









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T1M5F-A Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
110
a = 30°
100
90
DC
80
60°
90°
70 180°
60
120°
50
40
30
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IT(RMS),RMS ON-STATE CURRENT(AMPS)
1.0
110
a = 30°
100
90 60° 90°
DC
80
70
180°
60
120°
50
40
30
20
0.00
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45
IT(RMS),RMS ON-STATE CURRENT(AMPS)
0.50
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
1.2
DC
1.0
180°
0.8
120°
0.6
90°
0.4
60°
0.2
a = 30°
0.0
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IT(RMS),RMS ON-STATE CURRENT(AMPS)
1.0
Figure 3. Power Dissipation










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