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SPN8910S89RGB PDF даташит

Спецификация SPN8910S89RGB изготовлена ​​​​«SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SPN8910S89RGB
Описание N-Channel Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 

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SPN8910S89RGB Даташит, Описание, Даташиты
SPN8910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8910 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Small Power Switching
forMB/NB/VGA
Network DC/DC Power System
Load Switch
FEATURES
100V/2A,RDS(ON)= 320m@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-89 package design
PIN CONFIGURATION
SOT-89
GD S
123
2010/12/09 Preliminary
PART MARKING
SPN8910
AAAAAA
BBBBBB
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SPN8910S89RGB Даташит, Описание, Даташиты
SPN8910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN8910S89RGB
SOT-89
SPN8910S89TGB
SOT-89
SPN8910S89RGB : Tape Reel ; Pb – Free ; Halogen - Free
SPN8910S89TGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN8910
SPN8910
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Power Dissipation
TA=25
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RθJA
Typical
100
±20
2.2
1.7
5.5
1.5
-55/150
-55/150
85
Unit
V
V
A
A
W
/W
2010/12/09 Preliminary
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SPN8910S89RGB Даташит, Описание, Даташиты
SPN8910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=80V,VGS=0V
IDSS VDS=80V,VGS=0V
TJ=55
ID(on) VDS5V,VGS =10V
RDS(on) VGS= 10V,ID=2A
VGS= 4.5V,ID=1A
gfs VDS=5V,ID=2A
VSD IS=1A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=10V
ID= 2A
VDS=15V,VGS=0V
f=1MHz
VDD=50V, ID=2A,
VGEN=10V, RG=3.3
Min. Typ Max. Unit
100
V
1 2.0 2.5
±100 nA
1
uA
5
2.2 A
0.30 0.32
0.31 0.34
2.4 S
1.2 V
9 13
2 nC
1.4
508
29 pF
16.5
2
21.5
nS
11.2
18.8
2010/12/09 Preliminary
Page 3










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Номер в каталогеОписаниеПроизводители
SPN8910S89RGBN-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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