SPN9910T251TGB PDF даташит
Спецификация SPN9910T251TGB изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
Номер произв | SPN9910T251TGB |
Описание | N-Channel Enhancement Mode MOSFET |
Производители | SYNC POWER |
логотип |
8 Pages
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SPN9910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9910 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for most
of synchronous buck converter applications.
APPLICATIONS
z DC/DC Converter
z Load Switch
z Synchronous Buck Converter
FEATURES
60V/60A, RDS(ON)= 10mΩ@VGS= 10V
60V/60A, RDS(ON)= 12.0mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 . TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
2011 / 08 / 22 Ver.1
Page 1
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SPN9910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN9910T252RGB
TO-252
SPN9910T251TGB
TO-251
※ SPN9910T252RGB: Tape Reel ; Pb – Free; Halogen – Free
※ SPN9910T251TGB: Tube ; Pb – Free; Halogen – Free
Part Marking
SPN9910
SPN9910
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=100℃
Avalanche Current
Power Dissipation
TA=25℃
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.1mH , IAS = 38A , VDD = 25V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
EAS
TJ
TSTG
RθJA
Typical
60
±20
60
47
120
38
40
123
-55/150
-55/150
62
2011 / 08 / 22 Ver.1
Unit
V
V
A
A
A
W
mJ
℃
℃
℃/W
Page 2
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SPN9910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=48V,VGS=0V
IDSS VDS=48V,VGS=0V
TJ = 55 °C
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=15A
VGS= 4.5V,ID=10A
gfs VDS=5V,ID=15A
VSD IS=60A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=48V,VGS=4.5V
ID= 12A
VDS=15V,VGS=0V
f=1MHz
VDD=30V, ID=2A,
VGEN=10V, RG=3.3Ω
Min. Typ Max. Unit
60 V
1.0 2.5
±100 nA
1
5 uA
60 A
10
12
12
15
mΩ
47 S
1.2 V
24
6.9
10
3200
210
145
20
4
84.5
6.5
nC
pF
nS
2011 / 08 / 22 Ver.1
Page 3
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Номер в каталоге | Описание | Производители |
SPN9910T251TGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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