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SPN9910T251TGB PDF даташит

Спецификация SPN9910T251TGB изготовлена ​​​​«SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SPN9910T251TGB
Описание N-Channel Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 

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SPN9910T251TGB Даташит, Описание, Даташиты
SPN9910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9910 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for most
of synchronous buck converter applications.
APPLICATIONS
z DC/DC Converter
z Load Switch
z Synchronous Buck Converter
FEATURES
‹ 60V/60A, RDS(ON)= 10m@VGS= 10V
‹ 60V/60A, RDS(ON)= 12.0m@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TO-252 . TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
2011 / 08 / 22 Ver.1
Page 1









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SPN9910T251TGB Даташит, Описание, Даташиты
SPN9910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN9910T252RGB
TO-252
SPN9910T251TGB
TO-251
SPN9910T252RGB: Tape Reel ; Pb – Free; Halogen – Free
SPN9910T251TGB: Tube ; Pb – Free; Halogen – Free
Part Marking
SPN9910
SPN9910
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=100
Avalanche Current
Power Dissipation
TA=25
Avalanche Energy with Single Pulse
( Tj=25, L = 0.1mH , IAS = 38A , VDD = 25V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
EAS
TJ
TSTG
RθJA
Typical
60
±20
60
47
120
38
40
123
-55/150
-55/150
62
2011 / 08 / 22 Ver.1
Unit
V
V
A
A
A
W
mJ
/W
Page 2









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SPN9910T251TGB Даташит, Описание, Даташиты
SPN9910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=48V,VGS=0V
IDSS VDS=48V,VGS=0V
TJ = 55 °C
ID(on) VDS5V,VGS =10V
RDS(on)
VGS= 10V,ID=15A
VGS= 4.5V,ID=10A
gfs VDS=5V,ID=15A
VSD IS=60A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=48V,VGS=4.5V
ID= 12A
VDS=15V,VGS=0V
f=1MHz
VDD=30V, ID=2A,
VGEN=10V, RG=3.3
Min. Typ Max. Unit
60 V
1.0 2.5
±100 nA
1
5 uA
60 A
10
12
12
15
m
47 S
1.2 V
24
6.9
10
3200
210
145
20
4
84.5
6.5
nC
pF
nS
2011 / 08 / 22 Ver.1
Page 3










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Номер в каталогеОписаниеПроизводители
SPN9910T251TGBN-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER

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