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Номер произв SPC4567WS8RGB
Описание N & P Pair Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 



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SPC4567WS8RGB Даташит, Описание, Даташиты
SPC4567W
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC4567W is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
40V/6.0A,RDS(ON)= 53@VGS= 10V
40V/5.0A,RDS(ON)= 68@VGS= 4.5V
40V/4.5A,RDS(ON)= 78@VGS= 2.5V
‹ P-Channel
-40V/-7.2A,RDS(ON)= 95m@VGS=- 10V
-40V/-5.0A,RDS(ON)= 110m@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/06/03 Ver.1
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SPC4567WS8RGB Даташит, Описание, Даташиты
SPC4567W
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
ORDERING INFORMATION
Part Number
Package
SPC4567WS8RGB
SOP- 8P
SPC4567WS8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Part Marking
SPC4567W
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T 10sec
Steady State
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
N-Channel
P-Channel
40 -40
±20 ±20
6.0 -7.2
5.0 -5.0
25 -25
2.3 -2.3
2.5 2.8
1.6 1.8
-55/150
-55/150
50 52
80 80
Unit
V
V
A
A
A
W
/W
2011/06/03 Ver.1
Page 2









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SPC4567WS8RGB Даташит, Описание, Даташиты
SPC4567W
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( NMOS )
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=40V,VGS=0V
IDSS VDS=40V,VGS=0V
TJ=85
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=6.0A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 2A
VDD=15V,RL=15
ID1.0A,VGEN=10V
RG=6
Min. Typ Max. Unit
40 V
0.5 1.0
±100 nA
1
5 uA
10 A
42 0.053
52 0.063
67 0.078
13 S
0.8 1.2 V
16 24
3 nC
2.5
15 20
6 12 nS
10 20
40 80
2011/06/03 Ver.1
Page 3










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