|
|
Datasheet BS107P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BS107P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω
BS107P
D G
S
REFER TO BS107PT FOR GRAPHS
E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C
ABSOLUTE MAXIMUM RATINGS.
PARAME |  Zetex Semiconductors | data |
| 2 | BS107P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107P
200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET
Features
BVDSS > 200V RDS(ON) ≤ 23Ω @ VGS= 2.6V ID = 120mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to A |  Diodes | data |
| 3 | BS107PT | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω
BS107PT
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Vol | Zetex Semiconductors | data |
BS1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BS1001-7R | 100 Watt DC-DC Converters S Series
100 Watt DC-DC Converters
Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage
LGA
• Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with conve  Power-One converter | | |
| 2 | BS100C | PHOTODIODE FOR VISIBLE LIGHT Sharp Electrionic Components diode | | |
| 3 | BS107 | N-Channel Enhancement-Mode MOS Transistors Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number VN2010L BS107
V(BR)DSS Min (V) 200
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V) 0.8 to 1.8 0.8 to 3
ID (A) 0.19 0.12
Features
Benefits
D Low OnĆResistance: 6 W D Secondary Br  TEMIC transistor | | |
| 4 | BS107 | TMOS Switching(N-Channel-Enhancement) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N–Channel — Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont  Motorola Inc data | | |
| 5 | BS107 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS107 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf  NXP Semiconductors transistor | | |
| 6 | BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Siemens Semiconductor Group transistor | | |
| 7 | BS107 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features
· · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets
E
A
TO-92
B
Dim A B
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70 — 0.63 3.68 2.67 1.40
Mechanical Data
· · · ·  Diodes Incorporated transistor | |
| Esta página es del resultado de búsqueda del BS107P. Si pulsa el resultado de búsqueda de BS107P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |