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PDF BLW86 Data sheet ( Hoja de datos )
| Número de pieza | BLW86 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | ASI | |
| Logotipo |  |
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 1. HF/VHF Power Transistor - Philips  Hay una vista previa y un enlace de descarga de BLW86 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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BLW86
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW86 is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
VCBO
65 V
VCE0
35 V
VEBO
4.0 V
PDISS
60 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 2.9 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
EC
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVCBO
IC = 10 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
ICES VCE = 30 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
35
65
65
4.0
1.0
10
5.0 200
UNITS
V
V
V
V
mA
mA
---
Cob VCB = 30 V
f = 1.0 MHz
65 pF
PG VCE = 28 V
ηC
PIN = 7.0 W
f = 175 MHz
7.6
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BLW86.PDF ] | |
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