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MMBT5550L, MMBT5551L,
SMMBT5551L
High Voltage Transistors
NPN Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MMBT5550
MMBT5551, SMMBT5551
VCEO
140
160
Vdc
Collector −Base Voltage
MMBT5550
MMBT5551, SMMBT5551
VCBO
160
180
Vdc
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Human Body Model
Machine Model
VEBO
IC
ESD
6.0
600
> 8000
> 400
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING
DIAGRAM
x1x M G
G
1
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5550LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT5551LT1G SOT−23
(Pb−Free)
10,000/Tape &
Reel
MMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT5551LT3G SOT−23
(Pb−Free)
10,000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 10
1
Publication Order Number:
MMBT5550LT1/D
1000
VCE = 1 V
TA = 25°C
100
10
MMBT5550L, MMBT5551L, SMMBT5551L
1
10 mS
0.1
1.0 S
0.01
1
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 10. Current Gain Bandwidth Product
0.001
1.0
10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Safe Operating Area
1000
100
70 TJ = 25°C
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2 0.3
Cibo
Cobo
0.5 0.7 1.0
2.0 3.0 5.0 7.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Capacitances
10
20
1000
500
300
200
tr @ VCC = 30 V
100
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
50 td @ VEB(off) = 1.0 V
30 VCC = 120 V
20
10
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−On Time
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5