PDF MMBT5550L Data sheet ( Hoja de datos )

Número de pieza	MMBT5550L
Descripción	High Voltage Transistors
Fabricantes	ON Semiconductor
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No Preview Available ! MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 VCEO 140 160 Vdc Collector −Base Voltage MMBT5550 MMBT5551, SMMBT5551 VCBO 160 180 Vdc Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD 6.0 600 > 8000 > 400 Vdc mAdc V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM x1x M G G 1 x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT5550LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT5551LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT5551LT1G SOT−23 (Pb−Free) 10,000/Tape & Reel MMBT5551LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT5551LT3G SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 10 1 Publication Order Number: MMBT5550LT1/D 1 page 1000 VCE = 1 V TA = 25°C 100 10 MMBT5550L, MMBT5551L, SMMBT5551L 1 10 mS 0.1 1.0 S 0.01 1 0.1 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 10. Current Gain Bandwidth Product 0.001 1.0 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Safe Operating Area 1000 100 70 TJ = 25°C 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 Cibo Cobo 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 12. Capacitances 10 20 1000 500 300 200 tr @ VCC = 30 V 100 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 13. Turn−On Time http://onsemi.com 5 5 Page

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