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VS-ST180S20P0PBF PDF даташит

Спецификация VS-ST180S20P0PBF изготовлена ​​​​«Vishay» и имеет функцию, называемую «Phase Control Thyristors».

Детали детали

Номер произв VS-ST180S20P0PBF
Описание Phase Control Thyristors
Производители Vishay
логотип Vishay логотип 

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VS-ST180S20P0PBF Даташит, Описание, Даташиты
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 200 A
TO-209AB (TO-93)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
200 A
400 V,800 V, 1200 V, 1600 V, 2000 V
1.75 V
150 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Diode variation
Single SCR
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to
1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
200
85
314
5000
5230
125
114
400 to 2000
100
-40 to 125
UNITS
A
°C
A
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
04 400
08 800
VS-ST180S
12
1200
16 1600
20 2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1300
1700
2100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 11-Mar-14
1 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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VS-ST180S20P0PBF Даташит, Описание, Даташиты
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse
TJ = TJ maximum, anode supply 12 V resistive load
VALUES UNITS
200 A
85 °C
314
5000
5230
A
4200
4400
125
114
kA2s
88
81
1250
kA2s
1.08
V
1.14
1.18
m
1.14
1.75 V
600
1000 (300)
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
VALUES
1000
1.0
100
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
30 mA
Revision: 11-Mar-14
2 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-ST180S20P0PBF Даташит, Описание, Даташиты
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
TEST CONDITIONS
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
TYP. MAX.
10
2.0
3.0
20
5.0
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
10
UNITS
W
A
V
mA
V
mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TStg
RthJC
RthC-hs
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheeet
VALUES
UNITS
-40 to 125
-40 to 150
°C
0.105
0.04
K/W
31
(275)
24.5
(210)
N·m
(lbf in)
280 g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
180°
0.015
0.012
120°
0.019
0.020
90°
0.025
0.027
TJ = TJ maximum
60°
0.036
0.037
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Mar-14
3 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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