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VS-ST330C18L PDF даташит

Спецификация VS-ST330C18L изготовлена ​​​​«Vishay» и имеет функцию, называемую «Phase Control Thyristors».

Детали детали

Номер произв VS-ST330C18L
Описание Phase Control Thyristors
Производители Vishay
логотип Vishay логотип 

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VS-ST330C18L Даташит, Описание, Даташиты
www.vishay.com
VS-ST330CL Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-200AC (B-PUK)
PRODUCT SUMMARY
Package
TO-200AC (B-PUK)
Diode variation
Single SCR
IT(AV)
VDRM/VRRM
650 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
VTM 1.90 V
IGT 100 mA
TJ -40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
650
55
1230
25
9000
9420
405
370
400 to 2000
100
-40 to 125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
Revision: 15-Apr-14
1 Document Number: 94408
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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VS-ST330C18L Даташит, Описание, Даташиты
www.vishay.com
VS-ST330CL Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST330C..L
04
08
12
14
16
18
20
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1400
1600
1800
2000
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT TJ = TJ
V MAXIMUM mA
500
900
1300
1500
50
1700
1900
2100
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
650 (314)
55 (75)
1230
9000
9420
7570
7920
405
370
287
262
4050
0.91
0.93
0.57
0.57
1.90
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
VALUES
1000
1.0
100
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
50 mA
Revision: 15-Apr-14
2 Document Number: 94408
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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VS-ST330C18L Даташит, Описание, Даташиты
www.vishay.com
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST330CL Series
Vishay Semiconductors
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
VALUES
UNITS
Typ. Max.
10.0
W
2.0
3.0 A
20
V
5.0
200 -
100 200 mA
50 -
2.5 -
1.8 3.0
V
1.1 -
IGD
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
VGD
unit with rated VDRM anode to
cathode applied
10
0.25
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
TJ
Maximum storage temperature range
TStg
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
-40 to 150
°C
0.11
0.06
0.011
K/W
0.005
9800
(1000)
N
(kg)
250 g
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.012
0.010
0.008
0.008
120°
0.014
0.015
0.014
0.014
90°
0.018
0.018
0.019
0.019
TJ = TJ maximum
K/W
60°
0.026
0.027
0.027
0.028
30°
0.045
0.046
0.046
0.046
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
3 Document Number: 94408
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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