HSMS-2863 PDF даташит
Спецификация HSMS-2863 изготовлена «Agilent Technologies» и имеет функцию, называемую «Surface Mount Microwave Schottky Detector Diodes». |
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Детали детали
Номер произв | HSMS-2863 |
Описание | Surface Mount Microwave Schottky Detector Diodes |
Производители | Agilent Technologies |
логотип |
6 Pages
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Surface Mount Microwave
Schottky Detector Diodes
Technical Data
HSMS-2850 Series
HSMS-2860 Series
Features
• Surface Mount SOT-23/
SOT-143 Package
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
up to 35 mV/µW at 2.45 GHz
up to 25 mV/µW at 5.80 GHz
• Low Flicker Noise:
-162 dBV/Hz at 100 Hz
• Low FIT (Failure in Time)
Rate*
• Tape and Reel Options
Available
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
HSMS-2860
Package Lead Code
Identification
SINGLE
3
SERIES
3
12
#0
COMMON
ANODE
3
12
#2
COMMON
CATHODE
3
12
#3
12
#4
UNCONNECTED
PAIR
34
12
#5
HSMS-2850
Package Lead Code
Identification
SINGLE
3
SERIES
3
12
#0
12
#2
UNCONNECTED
PAIR
34
12
#5
Description
Hewlett-Packard’s HSMS-2850
family of zero bias Schottky
detector diodes and the
HSMS-2860 family of DC biased
detector diodes have been
designed and optimized for use
from 915 MHz to 5.8 GHz. They
are ideal for RF/ID and RF Tag
applications requiring small and
large signal detection, modula-
tion, RF to DC conversion or
voltage doubling.
Available in various package
configurations, these two families
of detector diodes provide low
cost solutions to a wide variety of
design problems. Hewlett-
Packard’s manufacturing
techniques assure that when two
diodes are mounted into a single
SOT-23 or SOT-143 package, they
are taken from adjacent sites on
the wafer, assuring the highest
possible degree of match.
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2
DC Electrical Specifications, TA = +25°C, Single Diode
Part
Package
Maximum
Number
HSMS-
Marking
Code[1]
Lead
Code
Configuration
Forward Voltage
VF (mV)
Typical
Capacitance
CT (pF)
2850 P0 0 Single
150 250
2852 P2 2 Series Pair [2,3]
2855 P5 5 Unconnected Pair [2,3]
0.30
2860 T0 0 Single
250 350
2862 T2 2 Series Pair [2,3]
2863 T3 3 Common Anode [2,3]
2864 T4 4 Common Cathode [2,3]
2865 T5 5 Unconnected Pair [2,3]
0.30
Test
Conditions
IF = 0.1 mA IF = 1.0 mA VR = –0.5 V to –1.0V
f = 1 MHz
Notes:
1. Package marking code is in white.
2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5 V.
RF Electrical Specifications, TA = +25°C, Single Diode
Part
Number
HSMS-
2850
2852
2855
Test
Conditions
2860
2862
2863
2864
2865
Test
Conditions
Typical Tangential Sensitivity
TSS (dBm) @ f =
915 MHz 2.45 GHz 5.8 GHz
–57 –56
–55
Video Bandwidth = 2 MHz
Zero Bias
–57 –56
–55
Video Bandwidth = 2 MHz
Ib = 5 µA
Typical Voltage Sensitivity
γ (mV/µW) @ f =
915 MHz 2.45 GHz 5.8 GHz
40 30 22
Power in = –40 dBm
RL = 100 KΩ, Zero Bias
50 35 25
Power in = –40 dBm
RL = 100 KΩ, Ib = 5 µA
Typical
Video
Resistance
RV (KΩ)
8.0
5.0
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3
Absolute Maximum Ratings, Ta = +25°C, Single Diode
Symbol
Parameter
Absolute Maximum[1]
HSMS-285x HSMS-286x
PT Total Device Dissipation[2] 75 mW
250 mW
PIV Peak Inverse Voltage
2.0 V
4.0 V
TJ Junction Temperature
150°C
150°C
TSTG Storage Temperature
-65°C to 150°C -65°C to 150°C
TOP Operating Temperature -65°C to 150°C -65°C to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. CW Power Dissipation at TLEAD = +25°C. Derate linearly to zero at
maximum rated temperature.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Equivalent Circuit Model
HSMS-2850, HSMS-2860;
Singles
0.08 pF
2 nH
RS
Rj
0.18 pF
RS = series resistance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = identity factor (see table of SPICE parameters)
SPICE Parameters
Parameter
BV
CJ0
EG
IBV
IS
N
RS
PB (VJ)
PT (XTI)
M
Units
V
pF
eV
A
A
Ω
V
HSMS-285X
3.8
0.18
0.69
3 x 10E-4
3 x 10E-6
1.06
25
0.35
2
0.5
HSMS-286X
7.0
0.18
0.69
10E-5
5.0 x 10E-8
1.08
5.0
0.65
2
0.5
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