KA5Q1265RT PDF даташит
Спецификация KA5Q1265RT изготовлена «Fairchild» и имеет функцию, называемую «PWM IC». |
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Детали детали
Номер произв | KA5Q1265RT |
Описание | PWM IC |
Производители | Fairchild |
логотип |
6 Pages
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Preliminary
KA5Q1265RT
SPS
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/turn-
off driver, thermal shut down protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared to discrete
MOSFET and controller or RCC switching converter solution, a SPS
can reduce total component count, design size, and weight and at
the same time increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost-effective design in Quasi-
Resonant Converter as C-TV power supply.
TO-220F-5L
SPS
1. Drain 2. GND 3. VCC 4. FB 5. Sync
FEATURES
ORDERING INFORMATION
• Quasi Resonant Converter Controller
• Internal Burst mode Controller for Stand-by mode
• Pulse by pulse current limiting
• Over current Latch protection
• Over voltage protection (Vsync: Min. 11V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
Device
KA5Q1265RT
Package
TO-220F-5L
Topr (°C)
−25°C to +85°C
BLOCK DIAGRAM
Sync.
+
–
PSR
REF.
Burst mode
controller
Internal
Bias
Vref
REF.
–
5+
OSC
S_
Q
R
OVP
–
+
4
1.7R
Ifb R
LEB
PWM
–
+
Ids Vz
Vds
REF.
+
–
TSD
150oC
Vfb offset
Power-on
Reset
S
Q
R
Delay
500nS
3
UVLO
Ron
Roff
+
–
OCL
REF.
1
Rsense
2
REV. B
1999 Fairchild Semiconductor Corporation
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Preliminary
KA5Q1265RT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Drain-source (GND) voltage (1)
Drain-Gate voltage (RGS=1MΩ)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Supply voltage
Analog input voltage range (F/B pin)
Analog input voltage range (Sync pin)
Total power dissipation
Symbol
VDSS
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC
VFB
VSYNC
PD (wt H/S)
Derating
Operating temperature
Storage temperature
TOPR
TSTG
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
Value
650
650
±30
48
785
−
12
8.4
40
−0.3 to VSD
−0.3 to 13
135
1.1
−25 to +85
−55 to +150
SPS
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
V
W
W/°C
°C
°C
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Preliminary
KA5Q1265RT
SPS
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Drain-source breakdown voltage
Zero gate voltage drain current
BVDSS
IDSS
Static drain-source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
VGS=0V, ID=50µA
VDS=Max., Rating, VGS=0V
VDS=0.8*Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=6.0A
VDS=15V, ID=6.0A
VGS=0V, VDS=25V,
f=1MHz
Reverse transfer capacitance
Crss
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg VGS=10V, ID=12.0A,
VDS=0.5BVDSS (MOSFET
Qgs
switching time are
essentially independent of
Qgd operating temperature)
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Min.
650
−
−
−
5.7
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
0.72
−
2700
300
61
18
37
88
36
−
20
69
Max.
−
200
500
−
−
−
−
−
−
−
−
−
140
−
−
Unit
V
µA
µA
Ω
S
pF
nS
nC
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