TLP5214 PDF даташит
Спецификация TLP5214 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «Photocouplers GaAlAs Infrared LED & Photo IC». |
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Детали детали
Номер произв | TLP5214 |
Описание | Photocouplers GaAlAs Infrared LED & Photo IC |
Производители | Toshiba Semiconductor |
логотип |
20 Pages
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Photocouplers GaAℓAs Infrared LED & Photo IC
TLP5214
TLP5214
Isolated IGBT/Power MOSFET gate drive
AC and brushless DC motor drives
Industrial Inverters and Uninterruptible Power Supply (UPS)
The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photo-
coupler housed in a long creepage and clearance SO16L package.
The TLP5214, a smart gate driver photocoupler, includes functions of IGBT
desaturation detection, isolated fault status feedback, soft IGBT turn-off, active
Miller cramping and under voltage lockout (UVLO).
This photocoupler is suitable for driving IGBT and power MOSFET used in
inverter applications.
The TLP5214 consists two GaAℓAs infrared light-emitting diodes (LEDs) and two
high-gain and high-speed ICs. They realize high current, high-speed output control
and output fault status feedback.
Unit: mm
• Peak output current:
• Guaranteed performance over temperature:
• Supply current:
• Power supply voltage:
• Threshold input current:
• Switching time (tpLH / tpHL):
• Common mode transient immunity:
• Isolation voltage:
• Construction mechanical rating
SO16L
Height
Creepage Distance
Clearance
Insulation Thickness
2.3 mm (max)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
±4.0 A (max)
−40 to 110°C
3.5 mA (max)
15 to 30 V
IFLH = 6 mA (max)
150 ns (max)
±35 kV/μs (min)
5000 Vrms (min)
TOSHIBA 11-10M1
Weight: 0.37 g (typ.)
Truth Table
IF
OFF
ON
ON
ON
OFF
UVLO
(VCC2-VE)
Not Active ( > VUVLO+)
Not Active ( > VUVLO+)
Not Active ( > VUVLO+)
Active ( < VUVLO-)
Active ( < VUVLO-)
DESAT
FAULT
(14Pin DESAT Terminal Input)
Not Active
Low ( < VDESATth)
High ( > VDESATth)
Not Active
Not Active
(3Pin FAULT Terminal Output)
High
High
Low ( FAULT)
High
High
VO
Low
High
Low
Low
Low
Start of commercial production
2014-05
1 2014-5-9
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Pin Configuration
1 VS
2 VCC1
3 FAULT
4 VS
5 CATHODE
6 ANODE
7 ANODE
8 CATHODE
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
16
15
14
13
12
11
10
9
TLP5214
1 : VS
2 : VCC1
3 : FAULT
4 : VS
5 : CATHODE
6 : ANODE
7 : ANODE
8 : CATHODE
9 : VEE
10 : VCLAMP
11 : VOUT
12 : VEE
13 : VCC2
14 : DESAT
15 : VLED
16 : VE
Internal Circuit
ANODE
CATHODE
VCC1
FAULT
UVLO
SHIELD
DESAT
VCLAMP
VCC2
Vout
DESAT
VEE
VCLAMP
VE
Vs
VLED
Note : A 1-µF bypass capacitor must be connected between pins 9 and 13,pins 13 and 16.
2
2014-5-9
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Absolute Maximum Ratings (Note) (Ta = 25°C ,Unless otherwise specified)
TLP5214
Characteristics
Symbol
Rating
Unit
LED Input forward current
Input forward current derating (Ta ≧ 95°C)
Peak transient input forward current (Note 1)
Peak transient input forward current derating (Ta ≧ 95°C)
Reverse Input Volteage
Input power dissipation
Input power dissipation derating (Ta ≧ 95°C)
Detector Positive Input Supply Voltage
“H” peak output current
Ta = −40 to 110 °C
“L” peak output current
(Note 2)
FAULT Output Current
FAULT Pin Voltage
Total Output Supply Voltage
Negative Output Supply Voltage
Positive Output Supply Voltage
Output voltage
Peak Clamping Sinking Current
Miller Clamping Pin Voltage
DESAT Voltage
Output power dissipation
Output power dissipation (Ta ≧ 95°C)
Common Operating temperature range
Storage temperature range
Lead soldering temperature (10 s) (Note 3)
Isolation voltage (AC, 1 minute, R.H. ≦ 60%) (Note 4)
IF
∆IF/∆Ta
IFPT
∆IFPT/∆Ta
VR
PD
∆ PD /∆Ta
VCC1
IOPH
IOPL
IFAULT
VFAULT
(VCC2−VEE)
(VE−VEE)
(VCC2−VE)
VO
IClamp
VClamp
VDESAT
PO
∆ PO /∆Ta
Topr
Tstg
Tsol
BVS
25
−1
1
−25
6
40
−1.3
−0.5 to 7
−4.0
+4.0
8
−0.5 to VCC1
−0.5 to 35
-0.5 to 15
−0.5 to 35 − (VE−VEE)
−0.5 to VCC2
1.7
−0.5 to VCC2
VE to VE + 10
160
−5.3
−40 to 110
−55 to 125
260
5000
mA
mA/°C
A
mA/°C
V
mW
mW/°C
V
A
A
mA
V
V
V
V
V
A
V
V
mW
mW/°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: A ceramic capacitor (1 µF) should be connected from pin 9 to pin 13 and from pin 13 to pin 16 to stabilize
the operation of the high gain linear amplifier. Furthermore, in case VE-VEE>0V, a bypass capacitor, which
has good high frequency characteristic, a ceramic capacitor (1 µF) should be connected from pin 9 to pin 16.
Failure to provide the bypassing may impair the switching property. The total lead length between capacitor
and coupler should not exceed 1 cm.
Note 1: Pulse width PW ≦ 1 µs, 300 pps
Note 2: Exponential waveform pulse width PW ≦ 0.2 µs, f ≦ 15 kHz, VCC = 15 V
Note 3: For the effective lead soldering area.
Note 4: This device considered a two-terminal device: pins 1, 2, 3, 4, 5, 6, 7and 8 are shorted together, and
pins 9, 10, 11, 12, 13, 14, 15 and 16 are shorted together.
3 2014-5-9
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