DataSheet26.com

SVF2N60F PDF даташит

Спецификация SVF2N60F изготовлена ​​​​«SL» и имеет функцию, называемую «600V N-CHANNEL MOSFET».

Детали детали

Номер произв SVF2N60F
Описание 600V N-CHANNEL MOSFET
Производители SL
логотип SL логотип 

10 Pages
scroll

No Preview Available !

SVF2N60F Даташит, Описание, Даташиты
SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-cellTM structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60DTR
Package Type
TO-251-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Marking
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 1 of 10









No Preview Available !

SVF2N60F Даташит, Описание, Даташиты
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF2N60M/D
34
0.27
Rating
SVF2N60T
600
±30
2.0
8
44
0.35
115
-55+150
-55+150
SVF2N60F
23
0.18
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
SVF2N60M/D
RθJC
RθJA
3.7
110
Rating
SVF2N60T
2.86
62.5
SVF2N60F
5.56
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=1.0A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=2.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=2.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
3.7
250.1
35.7
1.1
9.2
23.4
15.3
20.1
5.67
1.74
1.99
Max.
--
1.0
±100
4.0
4.2
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 2 of 10









No Preview Available !

SVF2N60F Даташит, Описание, Даташиты
SVF2N60M/F/T/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD IS=2.0A,VGS=0V
Trr IS=2.0A,VGS=0V,
Qrr dIF/dt=100A/µS
1. L=30mH, IAS=2.52A, VDD=145V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width 300μs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max.
2.0
8.0
Unit
A
-- -- 1.4 V
-- 230 -- ns
-- 1.0 -- µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 3 of 10










Скачать PDF:

[ SVF2N60F.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SVF2N60C600V N-CHANNEL MOSFETSL
SL
SVF2N60CD600V N-CHANNEL MOSFETSL
SL
SVF2N60CF600V N-CHANNEL MOSFETSL
SL
SVF2N60CN600V N-CHANNEL MOSFETSL
SL

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск