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15MQ040NPbF PDF даташит

Спецификация 15MQ040NPbF изготовлена ​​​​«Vishay» и имеет функцию, называемую «Schottky Rectifier ( Diode )».

Детали детали

Номер произв 15MQ040NPbF
Описание Schottky Rectifier ( Diode )
Производители Vishay
логотип Vishay логотип 

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15MQ040NPbF Даташит, Описание, Даташиты
15MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 3 A
Cathode
Anode
SMA
PRODUCT SUMMARY
IF(AV)
VR
3A
40 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
DC
VRRM
IFSM
tp = 5 µs sine
VF 2 Apk, TJ = 125 °C
TJ Range
FEATURES
• Surface mountable
• Extremely low forward voltage
• Compact size
• Improved reverse blocking voltage capability relative to
other similar size Schottky
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Switching power supplies
• Meter protection
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
DESCRIPTION
The 15MQ040NPbF Schottky rectifier is designed to be
used for low-power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
VALUES
3
40
330
0.43
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
15MQ040NPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 105 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 12 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
2.1
330
140
6.0
1.0
UNITS
A
A
mJ
A
Document Number: 94141
Revision: 02-Jul-09
For technical questions, contact: [email protected]
www.vishay.com
1









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15MQ040NPbF Даташит, Описание, Даташиты
15MQ040NPbF
Vishay High Power Products Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
1A
2A
1A
2A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.42
0.49
0.34
0.43
0.5
20
0.26
64.6
134
2.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
UNITS
°C
80 °C/W
0.07
0.002
V3F
g
oz.
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94141
Revision: 02-Jul-09









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15MQ040NPbF Даташит, Описание, Даташиты
15MQ040NPbF
Schottky Rectifier, 3 A Vishay High Power Products
10
TJ = 150 °C
1 TJ = 125 °C
TJ = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 150 °C
10 TJ = 125 °C
1 TJ = 100 °C
TJ = 75 °C
0.1
0.01
TJ = 50 °C
0.001
0
TJ = 25 °C
5 10 15 20 25 30 35 40
VR - Reverse Voltage (V)
Fig. 2Typical Peak Reverse Current vs.
Reverse Voltage
1000
100 TJ = 25 °C
150
140 DC
130
120
110
100 D = 0.20
90 D = 0.25
80
D = 0.33
D = 0.50
70 D = 0.75
60
50 Square wave (D = 0.50)
40 See note (1)
80 % rated VR applied
30
0
0.5 1.0 1.5 2.0 2.5
3.0
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
1.4
D = 0.20
1.2 D = 0.25
D = 0.33
1.0 D = 0.50
D = 0.75
0.8
RMS limit
0.6
0.4 DC
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
IF(AV) - Average Forward Current (A)
Fig. 5Maximum Average Forward Dissipation vs.
Average Forward Current
1000
At any rated load condition
and with rated VRRM applied
following surge
10
0 5 10 15 20 25 30 35 40 45
100
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3Typical Junction Capacitance vs. Reverse Voltage
tp - Square Wave Pulse Duration (µs)
Fig. 6Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 94141
Revision: 02-Jul-09
For technical questions, contact: [email protected]
www.vishay.com
3










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