DataSheet26.com

B1012 PDF даташит

Спецификация B1012 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB1012».

Детали детали

Номер произв B1012
Описание PNP Transistor - 2SB1012
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

6 Pages
scroll

No Preview Available !

B1012 Даташит, Описание, Даташиты
2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
5 k
(Typ)
1 k
(Typ)
1
ID
http://www.Datasheet4U.com









No Preview Available !

B1012 Даташит, Описание, Даташиты
2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Rating
–120
–120
–7
–1.5
–3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
2000
Typ
0.5
2.0
Max Unit
—V
—V
–100 µA
–10 µA
30000
–1.5 V
–2.0 V
–2.0 V
–2.5 V
3.0 V
µs
µs
Test conditions
IC = –10 mA, RBE =
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –1 A*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
ID = 1.5 A*1
IC = –1 A, IB1 = –IB2 = –1 mA
2









No Preview Available !

B1012 Даташит, Описание, Даташиты
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
–5
–4 TC = 25°C
Pulse
–7 mA –5 mA
–3
–3 mA
–1 mA
–2
–0.5 mA
–1 IB = –0.3 mA
0 –1– 2– 3– 4– 5
Collector to emitter Voltage VCE (V)
2SB1012(K)
–3
–1.0
Area of Safe Operation
iC (peak)
IC (max)
–0.3
–0.1
–0.03 Ta = 25°C
1 Shot pulse
–0.01
–0.003
–3
–10 –30
–100 –300
Collector to emitter Voltage VCE (V)
30,000
10,000
DC Current Transfer Ratio vs.
Collector Current
VCE = –3 V
3,000
1,000
300
100
Ta = 75°C
25°C
–25°C
Pulse Test
30
–0.03
–0.1 –0.3
–1.0
Collector current IC (A)
–3
3










Скачать PDF:

[ B1012.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
B1010PNP Silicon TransistorROHM Semiconductor
ROHM Semiconductor
B1011PNP Transistor - 2SB1011Panasonic Semiconductor
Panasonic Semiconductor
B1012PNP Transistor - 2SB1012Hitachi Semiconductor
Hitachi Semiconductor
B1015PNP Transistor - 2SB1015Toshiba Semiconductor
Toshiba Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск