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SPA15N65C3 PDF даташит

Спецификация SPA15N65C3 изготовлена ​​​​«Infineon Technologies» и имеет функцию, называемую «Power Transistor».

Детали детали

Номер произв SPA15N65C3
Описание Power Transistor
Производители Infineon Technologies
логотип Infineon Technologies логотип 

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SPA15N65C3 Даташит, Описание, Даташиты
CoolMOSTM Power Transistor
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
Q g,typ
SPA15N65C3
650 V
0.28
63 nC
PG-TO220-3-31
Type
SPA15N65C3
Package
Marking
PG-TO220-3-31 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
E AS I D=3 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=5 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
dv /dt V DS=0...480 V
V GS
static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Rev. 2.0
page 1
Value
15
9.4
45
460
0.8
5.0
50
±20
±30
34
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-03-12
http://www.Datasheet4U.com









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SPA15N65C3 Даташит, Описание, Даташиты
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
SPA15N65C3
Value
15
45
Unit
A
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
min.
Values
typ.
Unit
max.
- - 3.7 K/W
- - 62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th)
V DS=V GS,
I D=0.675 mA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
V GS=10 V, I D=9.4 A,
T j=150 °C
R G f =1 MHz, open drain
650
2.1
-
-2
-
-
-
-
-
3
0.5
5-
-
0.25
0.68
1.4
-V
3.9
25 µA
100 nA
0.28
-
-
Rev. 2.0
page 2
2008-03-12









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SPA15N65C3 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics
Symbol Conditions
SPA15N65C3
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
V GS=0 V, V DS=25 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
V DD=400 V,
V GS=10 V, I D=15 A,
R G=6.8
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=480 V, I D=15 A,
V GS=0 to 10 V
- 1600
- 540
-6 7-
- 120
-3 2-
-1 4-
-7 0-
-1 1-
-9
-2 9-
-6 3
- 5.4
- pF
-
-
ns
- nC
-V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
t rr
Q rr
I rrm
V GS=0 V, I F=15 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
- 1.0 1.2 V
- 420
-8
-3 2-
- ns
- µC
A
1) J-STD20 and JESD22
2) Limited only by maximum temperature.
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2008-03-12










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Номер в каталогеОписаниеПроизводители
SPA15N65C3Power TransistorInfineon Technologies
Infineon Technologies

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