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4H11G PDF даташит

Спецификация 4H11G изготовлена ​​​​«ETC» и имеет функцию, называемую «Complementary Power Transistors».

Детали детали

Номер произв 4H11G
Описание Complementary Power Transistors
Производители ETC
логотип ETC логотип 

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4H11G Даташит, Описание, Даташиты
4H11G(NPN)
5H11G(PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Pb−Free Packages are Available
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
http://www.Datasheet4U.com









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4H11G Даташит, Описание, Даташиты
4H11 (NPN) 5H11 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mA, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VEB = 5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8 Adc, IB = 0.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8 Adc, IB = 0.8 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1 Vdc, IC = 2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, ftest = 1 MHz)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJD44H11
MJD45H11
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING TIMES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay and Rise Times
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =5Adc,IB1 =0.5Adc)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
Symbol Min Typ Max Unit
VCEO(sus)
80
Vdc
ICES
− − 10 mA
IEBO
− − 50 mA
VCE(sat) − − 1 Vdc
VBE(sat) − − 1.5 Vdc
hFE
60 −
40 −
Ccb
fT
td + tr
ts
tf
− 130 −
− 230 −
− 50 −
− 40 −
pF
MHz
− 300 −
− 135 −
− 500 −
− 500 −
− 140 −
− 100 −
ns
ns
ns









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4H11G Даташит, Описание, Даташиты
4H11 (NPN) 5H11 (PNP)
1
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
2 3 5 10 20 30 50
t, TIME (ms)
Figure 1. Thermal Response
100 200 300 500 1 k
20
10
5
3
2
1
0.5
0.3
0.1
0.05
0.02
1
500 ms 100 ms
dc 5 ms
1 ms
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
3 5 7 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T J(pk) = 150 _C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. T J(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
TC
TA
SURFACE
MOUNT
50 75 100 125
T, TEMPERATURE (°C)
Figure 3. Power Derating
150
4










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Номер в каталогеОписаниеПроизводители
4H11GComplementary Power TransistorsETC
ETC

Номер в каталоге Описание Производители
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