K2719 Datasheet PDF - Toshiba Semiconductor
| Part Number | K2719 | |
| Description | MOSFET ( Transistor ) - 2SK2719 | |
| Manufacturers | Toshiba Semiconductor | |
| Logo |  |
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2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
ymbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
DGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
3
9
125
295
3
12.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain (heat sink)
3. Source
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
ymbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
1.0
Rth (ch-a) 50.0
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
http://www.Datasheet4U.com
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2SK2719
rth – tw
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.05
0.02
0.1
0.01
0.01
0.005
0.003
10 μ
100 μ
Single pulse
1m
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
10 m
100 m
Pulse width tw (s)
1
10
Safe Operating Area
30
10 ID max (pulsed)*
100 μs*
3 ID max (continuous)
1 ms*
1
DC operation
0.5 Tc = 25°C
0.3
0.1
0.05
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1 100 3
10 30
VDSS max
300 1000
Drain-source voltage VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
Test circuit
RG = 25 Ω
VDD = 90 V, L = 60 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
21·L·I2·
⎝⎛⎜⎜
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K2719 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K2719.PDF Datasheet ] | |
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