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Número de pieza | SSM3J334R | |
Descripción | Power Management Switch Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J334R
○Power Management Switch Applications
• Lo w ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V)
R DS(ON) = 105 mΩ (max) (@VGS = -4.5 V)
R DS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
0.05 M A
0.42+-00..0058
3
Unit: mm
0.17
+0.08
-0.07
Absolute Maximum Ratings (Ta = 25°C)
Characteristic S
Drain-Source voltage
Gate-Source voltage
Drain current
DC I
Pulse
Power dissipation
Channel temperature
Storage temperature range
ymbol
VDSS
VGSS
D (Note 1)
IDP (Note 1,2)
PD (Note 3)
t < 10s
Tch
Tstg
Rating
-30
± 20
-4
-16
1
2
150
−55 to 150
Unit
V
V
A
W
°C
°C
1
0.95
2
0.95
2.9±0.2
A
SOT-23F
1: Gate
2: Source
3: Drain
Note: Using co ntinuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the si gnificant ch ange in
temperature, e tc.) ma y ca use th is product to decr ease in th e
JEITA
―
reliability si gnificantly eve n if the oper ating co nditions (i.e.
TOSHIBA
2-3Z1A
operating te mperature/current/voltage, e tc.) are
absolute maximum ratings.
within th e
Weight: 11 mg (typ.)
Please desig n the appropri ate relia bility upon revie wing the
Toshiba Semic onductor Reli ability Handbook (“Handli ng Precautions”/“Derating Conce pt and Method s”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW ≤ 1ms, Duty ≤ 1%
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
3
Equivalent Circuit (Top View)
3
KFL
12
12
Start of commercial production
2010-08
1 2014-03-01
http://www.Datasheet4U.com
1 page 1000
100
rth – tw
b
a
10
Single pulse
a. Mounted on FR4 board
( 25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2 ×3)
1
0.001 100 0.01 0.1
1 10 100
Pulse width tw (s)
0
SSM3J334R
PD – Ta
1600
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad: 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad: 0.72 mm2 ×3)
1200
a
800
b
400
0
-40 -20 0 20 40 60 80 100 141020
Ambient temperature Ta (°C)
160
5 2014-03-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM3J334R.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM3J334R | Power Management Switch Applications | Toshiba Semiconductor |
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