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HBCA144ES6R PDF даташит

Спецификация HBCA144ES6R изготовлена ​​​​«CYStech Electronics» и имеет функцию, называемую «PNP and NPN Dual Digital Transistors».

Детали детали

Номер произв HBCA144ES6R
Описание PNP and NPN Dual Digital Transistors
Производители CYStech Electronics
логотип CYStech Electronics логотип 

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HBCA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA144ES6R
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 1/8
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA144E chip and one DTC144E chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA144ES6R
RBE2
RB2
TR1
RBE1
RB1
TR2
RB1=47kΩ , RB2=47kΩ
RBE1=47kΩ , RBE2=47kΩ
Outline
SOT-363
Ordering Information
Device
Package
Shipping
Marking
HBCA144ES6R-0-T1-G
SOT-363
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
13
HBCA144ES6R
CYStek Product Specification
http://www.Datasheet4U.com









No Preview Available !

HBCA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
30 -30
100 -100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100μA
VI(on)
3
-
- V VO=0.3V, IO=2mA
VO(on)
-
- 0.3 V IO/II=10mA/0.5mA
II - - 0.18 mA VI=5V
IO(off)
-
- 0.5 μA VCC=50V, VI=0V
GI 68 -
- - VO=5V, IO=5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.3V, IO=-2mA
VO(on)
-
- -0.3 V IO/II=-10mA/-0.5mA
II - - -0.18 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 68 -
- - VO=-5V, IO=-5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA144ES6R
CYStek Product Specification









No Preview Available !

HBCA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 3/8
Characteristic Curves
•Tr1(NPN)
DC Current Gain vs Output Current
1000
Output Voltage vs Output Current
1000
100
Vo = 5V
10
1
0.1
1 10
Output Current --Io(mA)
100
Input Voltage vs Output Current (ON Characteristics)
10
Vo = 0.3V
1
100
Io / Ii = 20
10
11
0
Output Current ---Io(mA)
Output Current vs Input Voltage (OFF
Characteristics)
10
100
Vcc = 5V
1
0.1 0.1
0.1 1
10 100
0.1
1
10
Output Current --- Io(mA)
Input Voltage --- Vi(off)(V)
HBCA144ES6R
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
HBCA144ES6RPNP and NPN Dual Digital TransistorsCYStech Electronics
CYStech Electronics

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