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2CL4512H PDF даташит

Спецификация 2CL4512H изготовлена ​​​​«SiPower» и имеет функцию, называемую «High Voltage Diodes».

Детали детали

Номер произв 2CL4512H
Описание High Voltage Diodes
Производители SiPower
логотип SiPower логотип 

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2CL4512H Даташит, Описание, Даташиты
Power Semiconductor Technology
2CL4509H 2CL4512H
High Voltage Diodes for Micro-Wave Oven
Features
IF AV 450mA
VRRM 9kV ,12kV
High reliability
Applications
Rectification for high voltage power supply
of magnetron in Micro wave oven and others
Outline Dimensions and Mark
Unit mm
Code Lot No.
Cathode Mark
7.5 0.5
1.2 0.03
22min
22 0.5
22min
. Type
2CL4509H
.
Limiting Values Absolute Maximum Rating
2CL4512H
Item
Symbol Unit
2CL4509H
Code
T4509H
T4512H
Cathode Mark
2CL4512H
Repetitive Peak Reverse Voltage
VRRM
kV
9
12
Average Forward Current
IF(AV)
mA 450
(50HZHalf-sine wave, Resistance load, Ta 60 )
Forward Surge Current
IFSM A 30
50HZHalf-sine wave,Ta=25
Reverse Surge Current
IRSM mA 100
(WP=1ms, Rectangular-wave, One-shot, Ta=25 )
Virtual Junction Temperature
T(vj)
130
Storage Temperature
Tstg
-40 ~ +130
Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm Wind-cooled velocity is
more than 0.5m/s
Electrical Characteristics Ta=25 Unless otherwise specified
Item
Symbol Unit Test Condition
2CL4509H
2CL4512H
Peak Forward Voltage
VFM V IFM=450mA
Peak Reverse Current
IRRM1
A VRM=VRRM
valanche Breakdown Voltag
Ae
V BR
kV
IR=100 A
10 12
5
9.5 12.5
SiPower - The official marketing arm of Zhonghuan Semiconductor
http://www.sipower-inc.com
http://www.Datasheet4U.com









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2CL4512H Даташит, Описание, Даташиты
Power Semiconductor Technology
2CL4509 2CL4512
High Voltage Diodes for Micro-Wave Oven
Characteristics(Typical)
600
Ta =25
450
300
2CL4512H
2CL4509H
150
0
0 3 6 9 12 15 18
VFM V
Forward Characteristics
1.0
Ta =25
0.1
0.01
0.001
2CL4509H
2CL4512H
03
6 9 12 15
VRM kV
Reverse Characteristics
600
450
300
150
0
0 20 40 60 80 100 120 140
Ta
100
Ta =25
80 IR=100 A
N=100pcs.
60
40
2CL4509H
2CL4512H
20
0
12 14 16 18 20 22 24 26
V(BR) kV
IF AV Ta Derating
Safety Test
Breakdown Voltage Distribution
3mm Wide metal film is rolled on the surface
middle of diode body
1.Insulation Resistance Test:500V DC voltage is
added between A and B. The measurement by
insulation resistance meter is big than 1000M .
2.Resistance To Voltage Strength Test: 15kV
half-sine wave voltage is added between A and B for one
minute and no breakdown or arc in insulation oil.
http://www.sipower-inc.com










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Номер в каталогеОписаниеПроизводители
2CL4512(2CL4509 / 2CL4512) High Voltage DiodesSiPower
SiPower
2CL4512HHigh Voltage DiodesSiPower
SiPower

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