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C4081 PDF даташит

Спецификация C4081 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC4081».

Детали детали

Номер произв C4081
Описание NPN Transistor - 2SC4081
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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C4081 Даташит, Описание, Даташиты
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029.
Dimensions (Unit : mm)
2SC2412K
2SC4081
Structure
Epitaxial planar type
NPN silicon transistor
1.25
1.6 2.1
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2SC4617
(1)
(3) (2)
0.8
1.6
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2SC5658
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SC2412K, 2SC4081
dissipation
2SC4617, 2SC5658
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
* Denotes hFE
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol: B*
Limits
60
50
7
0.15
0.2
0.15
150
55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Output capacitance
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
390
0.4
3.5
Unit
VI
V
V
μA
μA
V
MHz
pF
Conditions
C=50μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.01 - Rev.D http://www.Datasheet4U.com









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C4081 Даташит, Описание, Даташиты
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
Packaging specifications and hFE
Package
Code
T146
Type
Basic ordering
hFE unit (pieces)
3000
2SC2412K QR
2SC4081
2SC4617
QR
QR
2SC5658 QR
hFE values are classified as follows :
Item
Q
R
hFE 120 to 270 180 to 390
T106
3000
Taping
TL
3000
T2L
8000
Electrical characterristic curves
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0 IB=0A
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
Data Sheet
10
Ta=25°C
8
30μA
27μA
24μA
21μA
6 18μA
15μA
4 12μA
9μA
6μA
2
3μA
0 IB=0A
0 4 8 12 16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
500
Ta=100°C
VCE=5V
200 25°C
55°C
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.5
0.2
0.1
0.05
IC/IB=50
20
10
Ta=25°C
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.01 - Rev.D









No Preview Available !

C4081 Даташит, Описание, Даташиты
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
0.5
0.2
0.1
0.05
Ta=100°C
25°C
55°C
IC/IB=10
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
0.5
0.2
Ta=100°C
25°C
55°C
0.1
0.05
IC/IB=50
0.02
0.01
0.2
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
20
10 Cib
5
Ta=25°C
f=1MHz
IE=0A
IC=0A
2
Cob
1
0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25°C
200 f=32MHZ
VCB=6V
100
50
20
10
0.2
0.5 1 2
5
EMITTER CURRENT : IE (mA)
10
Fig.11 Base-collector time constant
vs. emitter current
Data Sheet
Ta=25°C
500 VCE=6V
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.9 Gain bandwidth product vs.
emitter current
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
3/3
2012.01 - Rev.D










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