7N80Z PDF даташит
Спецификация 7N80Z изготовлена «UNISONIC TECHNOLOGIES» и имеет функцию, называемую «7A 800V N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 7N80Z |
Описание | 7A 800V N-CHANNEL POWER MOSFET |
Производители | UNISONIC TECHNOLOGIES |
логотип |
6 Pages
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UNISONIC TECHNOLOGIES CO., LTD
7N80Z
7A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The U TC 7N80Z is an N-ch annel mod e p ower MOSF ET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS te chnology. T his techno logy s pecializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand hig h e nergy pu lse i n the avala nche and
commutation mode.
The U TC 7N80Z is univ ersally a pplied in h igh efficie ncy s witch
mode power supply.
FEATURES
* RDS(on)=1.8Ω@VGS =10V
* High switching speed
* 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N80ZL-TF1-T
7N80ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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7N80Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 800
VGSS ±20
V
V
Drain Current
Continuous I
Pulsed (Note 1)
D7
IDM 26.4
A
A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS 580
EAR 16.7
mJ
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation
PD 52
W
Junction Temperature
Storage Temperature
TJ +
TSTG -55~
150
+150
°C
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=25mH, IAS=6.6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute ma ximum ratings are those va lues beyond which the dev ice could b e per manently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL
Junction to Ambient
Junction to Case
θJA
θJC
RATINGS
62.5
2.4
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N80Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA 800
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=20V
VDS=0V ,VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.3A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=640V, VGS=10V, ID=6.6A
(Note 1,2)
VDD=400V, ID=6.6A, RG=25Ω
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =6.6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=6.6A,
QRR dIF/dt=100A/μs (Note 1)
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP
0.93
3.0
1.4
129 0
120
10
27
8.2
11
35
100
50
60
650
7.0
MAX
10
100
5
-5
5.0
1.8
1680
155
13
35
80
210
110
130
6.6
26.4
1.4
UNIT
V
V/°C
µA
µA
µA
µA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталоге | Описание | Производители |
7N80 | 800V N-CHANNEL POWER MOSFET | Unisonic Technologies |
7N80Z | 7A 800V N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
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