DataSheet26.com

4N30Z PDF даташит

Спецификация 4N30Z изготовлена ​​​​«UNISONIC TECHNOLOGIES» и имеет функцию, называемую «40A 300V N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 4N30Z
Описание 40A 300V N-CHANNEL POWER MOSFET
Производители UNISONIC TECHNOLOGIES
логотип UNISONIC TECHNOLOGIES логотип 

3 Pages
scroll

No Preview Available !

4N30Z Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
4N30Z
4A, 300V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using
UTC’s advanc ed techn ology to provid e customers with a minimum
on-state res istance, lo w gate charge a nd superior s witching
performance.
„ FEATURES
* RDS(ON)<2@ VGS=10V, ID=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
* Enhanced ESD capability
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N30ZL-TN3-R
4N30ZG-TN3-R
4N30ZL-TN3-T
4N30ZG-TN3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-849.A
http://www.Datasheet4U.com









No Preview Available !

4N30Z Даташит, Описание, Даташиты
4N30Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 300
VGSS ±20
V
V
Continuous Drain Current
ID
4A
Avalanche Current
IAR
4A
Avalanche Energy
Single Pulsed
Repetitive
EAS 52
EAR
52
mJ
mJ
Power Dissipation
Junction Temperature
PD 1.14
TJ
+150
W
°C
Storage Temperature
TSTG -55~
+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse V
BVDSS I
IDSS
IGSS
D=250µA, VDS=0V 300
VDS=300V
VGS=+20V, VDS=0V
GS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
ID=250µA
VGS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=50V, ID=4A, IG=100µA,
VGS=10V
VDD=30V, ID=4A, RG=25,
VGS=0~10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=4A 0.1
MIN TYP MAX UNIT
V
1 µA
±10 µA
±10 µA
2 4V
2
850 pF
250 pF
200 pF
3.2
0.64
1.6
6
38
11
13
nC
nC
nC
ns
ns
ns
ns
4A
16 A
1.48 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
VER.A









No Preview Available !

4N30Z Даташит, Описание, Даташиты
4N30Z
„ TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment f ailures th at r esult f rom using pr oducts a t v alues that
exceed, ev en momentar ily , rated values ( such as maximum r atings , oper ating condition r anges , or
othe r par am eter s) lis ted in pr oducts specif ications of any and all U TC pr oducts described or contained
herein. UTC products ar e not des igned for us e in lif e support appliances , dev ices or systems where
malfunction of thes e products can be reasonably ex pected to result in per sonal injur y. Reproduction in
whole or in p art is p rohibited without the prior written cons ent of the copyr ight owner. T he inf ormation
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-849.A










Скачать PDF:

[ 4N30Z.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
4N30STANDARD THRU HOLE CASE 730A-04Motorola  Inc
Motorola Inc
4N30PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)Toshiba Semiconductor
Toshiba Semiconductor
4N30GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERSQT Optoelectronics
QT Optoelectronics
4N30(4N30 - 4N3) General Purpose 6-Pin Photodarlington OptocouplerFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск