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2SA1837AF PDF даташит

Спецификация 2SA1837AF изготовлена ​​​​«NELL SEMICONDUCTOR» и имеет функцию, называемую «High Frequency PNP Power Transistor».

Детали детали

Номер произв 2SA1837AF
Описание High Frequency PNP Power Transistor
Производители NELL SEMICONDUCTOR
логотип NELL SEMICONDUCTOR логотип 

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2SA1837AF Даташит, Описание, Даташиты
SEMICONDUCTOR
2SA1837AF RRooHHSS
Nell High Power Products
High Frequency PNP Power Transistor
-1A/-230V/20W
FEATURES
High transition frequency:
fT = 70MHz (typ.)
Complementary to 2SC4793AF
TO-220F package which can be
installed to the heat sink with one screw
APPLICATIONS
Power amplifier
Driver stage amplifier
BCE
TO-220F
(2SA1837AF)
C (2)
B
(1) PNP
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC Collector current-continuous
ICM (Icp)
Peak collector current
tp<5 ms
IB Base Current
PC Collector power dissipation
TC=25°C
Ta=25°C
TJ Junction temperature
TSTG
Storage temperature
VALUE
-230
-230
-5
-1
-2
-0.1
20
2.0
150
-55 to 150
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
ICBO
Collector cutoff current
VCBO=-230V, lE=0
TC=25°C
TC=125°C
lEBO
Emitter cutoff current
VEBO= -5V, lC=0
V(BR)CEO Collector to emitter breakdown voltage IB=0, Ic= -100mA
VCE(sat)*
Collector to emitter saturation voltage IC= -0.5A, IB= -50mA
VBE
hFE*
fT
Base to emitter voltage
Forward current transfer ratio
(DC current gain)
Transition frequeucy
IC= -0.5A, VCE= -5V
IC= -0.1A, VCE= -5V
VCE= -10V, IC= -100mA
Cob Collector output capacitance
VCB= -10V, IE=0, f=1MHz
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Min.
-230
100
Typ.
Max.
-1.0
-100
-1.0
-1.5
-1.0
320
70
30
UNIT
V
A
W
°C
UNIT
μA
V
MHz
pF
www.nellsemi.com
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2SA1837AF Даташит, Описание, Даташиты
SEMICONDUCTOR
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
Fig.1 IC-VCE Characteristics
-20mA
-10mA
-8mA
-6mA
-4mA
IB = -2mA
Common emitter
TC = 25°C
-2 -4 -6 -8 -10
Collector-emitter voltage, VCE (V)
1000
500
300
100
50
30
Fig.3 hFE-IC Characteristics
TC = 100°C
25°C
-25°C
Common emitter
VCE = -5 V
10
-0.003 -0.01 -0.03 -0.1 -0.3
-1
Collector current , lC (A)
-3
2SA1837AF RRooHHSS
Nell High Power Products
Fig.2 IC-VBE Temperature characteristics
-1.0
Common emitter
-0.8 VCE = -5V
TC = 100°C
-0.6 -25°C
25°C
-0.4
-0.2
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base-emitter voltage, VBE (V)
Fig.4 VCE (sat) - IC Temperature characteristics
-3
Common emitter
-1 IC/IB = 10
-0.5
-0.3
-0.1
-0.05
-0.03
TC = 100°C
-25°C
25°C
-0.01
-0.003 -0.01 -0.03 -0.1 -0.3
-1
Collector current , lC (A)
-3
Fig.5 fT-IC Characteristics
500
300 Common emitter
VCE =-10 V
TC = 25°C
100
50
30
10
-5
-10
-30
-100
-300
Collector current, lC (mA)
-1000
Fig.6 Safe operating area (SOA)
-5
-3
-1
-0.5
-0.3
-0.1
IC max (pulsed)*
IC max (continuous)
1 ms*
10 ms*
100 ms*
DC operation
TC = 25°C
-0.05
-0.03
* Single nonrepetitive pulse TC = 25°C
Curves must be derated linearly
with increase in temperature
-0.01
-1
VCEO max
-3
-10
-30
-100
-300
Collector emitter voltage, VCE (V)
www.nellsemi.com
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2SA1837AF Даташит, Описание, Даташиты
SEMICONDUCTOR
Case Style
2SA1837AF RRooHHSS
Nell High Power Products
TO-220F
16.4
15.4
10.6
10.4
2
13
3.4
3.1
3.7
3.2 7.1
6.7
16.0
15.8
2.8
2.6
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
2.54
TYP
4.8
4.6
0.48
0.44
2.85
2.65
All dimensions in millimeters
C (2)
B
(1) PNP
E(3)
www.nellsemi.com
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Номер в каталогеОписаниеПроизводители
2SA1837AFHigh Frequency PNP Power TransistorNELL SEMICONDUCTOR
NELL SEMICONDUCTOR

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