MTNK2S3 PDF даташит
Спецификация MTNK2S3 изготовлена «CYStech Electronics» и имеет функцию, называемую «N-CHANNEL MOSFET». |
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Детали детали
Номер произв | MTNK2S3 |
Описание | N-CHANNEL MOSFET |
Производители | CYStech Electronics |
логотип |
7 Pages
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CYStech Electronics Corp.
N-CHANNEL MOSFET
MTNK2S3
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 1/7
Description
The MTNK2S3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
MTNK2S3
D
G
G:Gate
S S:Source
D:Drain
Outline
SOT-323
D
GS
Ordering Information
Device
MTNK2S3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTNK2S3
CYStek Product Specification
http://www.Datasheet4U.com
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Drain Reverse Current
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
TCH
Tstg
Limits
60
±20
200
800 *1
200
800 *1
200 *2
1500 *3
+150
-55~+150
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max.
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
60
1
-
-
-
-
-
100
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
--
- 2.5
- ±10
-1
1.5 3
1.7 3.2
1.9 3.3
240 -
29 -
4-
2.8 -
3-
5-
14 -
9-
1.1 -
0.1 -
0.23 -
0.8 1.2
Unit Test Conditions
V VGS=0, ID=10μA
V VDS=VGS, ID=250μA
μA VGS=±20V, VDS=0
μA VDS=60V, VGS=0
ID=500mA, VGS=10V
Ω ID=100mA, VGS=5V
ID=100mA, VGS=4.5V
mS VDS=10V, ID=100mA
pF VDS=25V, VGS=0, f=1MHz
ns
VDS=30V, ID=200mA, VGS=10V,
RG=6Ω
nC VDS=30V, ID=200mA, VGS=10V
V VGS=0V, IS=200mA
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTNK2S3
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 3/7
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0246
Typical Output Characteristics
10V 6V
4.5V
4V
3.5V
3V
2.5V
VGS=2V
8 10
Drain-Source Voltage -VDS(V)
12
Typical Transfer Characteristics
1.4
VDS=10V
1.2
1
0.8
0.6
0.4
0.2
0
02468
10
Gate-Source Voltage-VGS(V)
12
Static Drain-Source On-State resistance vs Drain Current
10
VGS=2.5V
VGS=4.5V
1
0.001
VGS=10V
0.01 0.1
Drain Current-ID(A)
1
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
7
6
5
4
3
2 ID=100mA
1
0
0 2 4 6 8 10
Gate-Source Voltage-VGS(V)
Reverse Drain Current vs Source-Drain Voltage
1.2
1 Tj=25°C
0.8
Tj=125°C
0.6
0.4
0.2
0
0.2 0.4 0.6 0.8
Reverse Drain Current -IDR(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
7
6 VGS=10V, ID=100mA
5
4
3
2
1
0
-60 -20 20
60 100 140
Junction Temperature-Tj(°C)
180
MTNK2S3
CYStek Product Specification
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Номер в каталоге | Описание | Производители |
MTNK2S3 | N-CHANNEL MOSFET | CYStech Electronics |
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