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A2072 PDF даташит

Спецификация A2072 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SA2072».

Детали детали

Номер произв A2072
Описание PNP Transistor - 2SA2072
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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A2072 Даташит, Описание, Даташиты
Transistors
2SA2072
High voltage discharge, High speed switching,
Low Noise (60V, 3A)
2SA2072
zFeatures
1) High speed switching. (Tf : Typ. :20ns at IC=3A)
2) Low saturation voltage, typicaly.
(Typ. : 200mV at IC=2.0A, IB=200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5825.
zApplications
High speed switching, Low noise
zExternal dimensions(Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
(1) Base
(2) Collector
(3) Emitter
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
Abbreviated symbol : A2072
0.5
1.0
zStructure
PNP silicon epitaxai l planar transistor
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zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SA2072
Taping
TL
2500
zAbsolute maximumratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
DC
Pulsed
IC
ICP
Power dissipation
PC
Junction temperature
Range of storage temperature
1 Pw=100ms
2 Ta=25°C
3 Tc=25°C
Tj
Tstg
Limits
60
60
6
3
6
1.0
10.0
150
55 to 150
Unit
V
V
V
A
A 1
W 2
W 3
°C
°C
1/4
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A2072 Даташит, Описание, Даташиты
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE (sat)
DC current gain
hFE
Transistor frequency
fT
Collector output capacitance
Cob
Turn-on time
Storage time
Fall time
ton
tstg
tf
1 Non repetitive pulse
2 See switching characteristics measurement circuits
2SA2072
Min.
60
60
6
120
Typ.
200
180
50
20
150
20
Max.
1.0
1.0
500
270
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Condition
IC = −1mA
IC = −100µA
IE = −100µA
VCB = −20V
VEB = −4V
IC = −2A
IB = −0.2A
VCE = −2V
IC = −100mA
VCE = −10V
IE =100mA
f =10MHz
VCB = −10V
IE =0mA
f =1MHz
IC = −3A
IB1 = −300mA
IB2 =300mA
VCC 25V
1
1
2
zhFE RANK
Q
120270
2/4









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A2072 Даташит, Описание, Даташиты
Transistors
zElectrical characteristics curves
200
IB=1000µA
900µA
160 800µA
700µA
120 600µA
500µA
80 400µA
300µA
40 200µA
100µA
0 0µA
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics
10 10ms 1ms
100µs
100ms
1
DC
0.1
0.01
0.001
0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Safe operating area
2SA2072
1000
100
Tstg
Tf
Ton
Ta=25°C
VCC=25V
IC/IB=10/1
10
0.01
0.1 1
IC (A)
Fig.3 Switching Time
10
1000
125°C
25°C
100
40°C
10
VCE=2V
1000
100
10
Ta=25°C
VCE=5V
VCE=3V
VCE=2V
1
0.1
IC/Ib=10/1
125°C
25°C
40°C
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs.collector current ( Ι )
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain
vs.collector current ( ΙΙ )
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs.collector current ( Ι )
1
Ta=25°C
Ic/Ib=20/1
0.1
Ic/Ib=10/1
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation voltage
vs.collector current ( ΙΙ )
10
IC/Ib=10/1
1 40°C
125°C
25°C
0.1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.8 Base-emitter saturation voltage
vs. collector current
1000
100
Ta=25°C
VCE=10V
10
1
0.001
0.01 0.1
1
EMITTER CURRENT : IE (A)
10
Fig.9 Transition frequency
3/4










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