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PDF D4014 Data sheet ( Hoja de datos )
| Número de pieza | D4014 | |
| Descripción | GOLD METALIZED SILICON DMOS RF FET | |
| Fabricantes | Point Nine | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D4014 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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POINT NINE
Te c h n o l o g i e s , I n c .
D4014 TetraFET
55W - 28V - 1GHz
GOLD METALIZED SILICON
DMOS RF FET
FEATURES
• METAL GATE
• EXTRA LOW Crss
• BROAD BAND
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
PD
BVDSS
VGSS
ID
Tstg
Tj
RØj-c
ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C unless otherwise stated)
Power Dissipation
185W
Drain-source breakdown voltage
60V
Gate-source voltage
Drain Current
±20V
14A
Storage temperature
Maximum operating junction temperature
-65 to 150°C
200°C
Thermal resistance junction-case
Max. .95°C/W
BVDSS
IDSS
IGSS
VGS(th)
gfs
Ciss
Coss
Crss
GPS
η
VSWR
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
Breakdown voltage, drain source
Drain leakage current
Gate leakage current
Gate threshold voltage
Transconductance (300µs pulse)
Test Conditions
PER SIDE
VGS=0
VDS=28V
VGS=20V
ID=10mA
VDS=10V
ID=100mA
VGS=0
VDS=0
VDS=VGS
ID=1.4A
Min. Typ. Max.
60 60 60
1
1
15
1.4
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=0
VDS=0
VDS=0
VGS=-0
VGS=0
VGS=0
f=1MHz
f=1MHz
f=1MHz
84
35
3.5
Common source power gain
Drain efficiency
Load mismatch tolerance
TOTAL DEVICE
PO=55W
VDS=28V IDQ=1.4A
f=1GHz
10
40
20:1
Unit
Vdc
mAdc
µAdc
Vdc
Mhos
pF
pF
pF
dB
%
DIMENSIONS
C
E
AH
N KM
B
I
F
O
G
D
P
J
DM Millimeter TOL Inches
A
15.24
.50 .750
B
10.77
.13 .424
C 45° .05 45°
D
9.78
.13 .385
E
5.71
.13 .255
F
27.94
.13 1.100
G 1.52R .13 .060R
H 10.16 .13 .400
I 22.22 MAX .875
J
0.13
.02 .005
K
2.16
.13 .I07
M 1.52 .13 .060
N
5.08
.50 .200
O 34.04 .13 1.340
P
1.57R
.08 .062R
TOL
.020
.005
5°
.005
.005
.005
.005
.005
MAX
.001
.005
.005
.020
.005
.003
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.
U.S. PATENTS 5,121,176 & 5,179,032
GLOBAL PATENTS PENDING
2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375-6602 • www.point9.com • www.rfmosfet.com
http://www.Datasheet4U.com
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| PDF Descargar | [ Datasheet D4014.PDF ] | |
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