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MTD2955V PDF даташит

Спецификация MTD2955V изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв MTD2955V
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MTD2955V Даташит, Описание, Даташиты
MTD2955V
Power MOSFET
12 Amps, 60 Volts
P–Channel DPAK
This Power MOSFET is designed to withstand high ener gy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp 10 ms)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
12
8.0
42
60
0.4
2.1
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
°C
Single Pulse Drain–to–Source Avalanche EAS 216 mJ
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 )
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
2.5
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
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12 AMPERES
60 VOLTS
RDS(on) = 230 m
P–Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
2955V
PIN ASSIGNMENT
4
Drain
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD2955V
DPAK
75 Units/Rail
MTD2955V1
DPAK
75 Units/Rail
MTD2955VT4
DPAK 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MTD2955V/D
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MTD2955V Даташит, Описание, Даташиты
MTD2955V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 4.) V(BR)DSS
60
58
Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
µAdc
– – 10
– – 100
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
IGSS – – 100 nAdc
Gate Threshold Voltage
(Cpk 2.0) (Note 4.) VGS(th)
Vdc
(VDS = VGS, ID = 250 µAdc)
2.0 2.8 4.0
Threshold Temperature Coefficient (Negative)
– 5.0 – mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 6.0 Adc)
(Cpk 1.5) (Note 4.) RDS(on)
Ohm
– 0.185 0.230
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
VDS(on)
Vdc
– 2.9
– 2.5
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
3.0 5.0
– mhos
550 770
pF
– 200 280
– 50 100
– 15 30 ns
– 50 100
– 24 50
– 39 80
– 19 30 nC
– 4.0 –
– 9.0 –
– 7.0 –
Vdc
– 1.8 3.0
– 1.5 –
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
– 115 –
– 90 –
– 25 –
– 0.53 –
ns
µC
nH
– 3.5 –
– 4.5 –
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
LS
nH
– 7.5 –
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MTD2955V Даташит, Описание, Даташиты
MTD2955V
TYPICAL ELECTRICAL CHARACTERISTICS
25
TJ = 25°C
20
15
VGS = 10 V
9V 8V
7V
10 6 V
5 5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
24
VDS 10 V
21
18
TJ = -Ă55°C
25°C
100°C
15
12
9
6
3
0
24 35
6789
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
Figure 2. Transfer Characteristics
0.40
0.35 VGS = 10 V
0.30 TJ = 100°C
0.25
0.20 25°C
0.15 -Ă55°C
0.10
0.05
0
03
6 9 12 15 18 21 24
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.250
0.225
TJ = 25°C
0.200
VGS = 10 V
0.175
0.150
15 V
0.125
0.100
0.075
0.050
0 3 6 9 12 15 18 21 24
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
1.8 VGS = 10 V
1.6 ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-Ă50 -Ă25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
175
1000
VGS = 0 V
100
TJ = 125°C
100°C
10
0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
60
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