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FDD5N50 PDF даташит

Спецификация FDD5N50 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel UniFET MOSFET».

Детали детали

Номер произв FDD5N50
Описание N-Channel UniFET MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDD5N50 Даташит, Описание, Даташиты
FDD5N50
N-Channel UniFETTM MOSFET
500 V, 4 A, 1.4 Ω
Features
•R DS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A
• Low Gate Charge (Typ. 11 nC)
•L ow Crss (Typ. 5 pF)
• 100% Avalanche Tested
•R oHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is F airchild Semiconductor ’s high volt age
MOSFET family based on planar stripe and D MOS technology.
This MOSFET is tailored to reduce on-st ate resistance, and to
provide be tter switching performance and higher avalanche
energy strengt h. This device family is suit able for switching
power convert er applicatio ns such as power factor corr ection
(PFC), flat p anel display (FPD) T V pow er, ATX and electronic
lamp ballasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC0
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDD5N50TM_WS
500
±30
4
2.4
16
256
4
4
4.5
40
.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N50TM_WS
1.4
110
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FDD5N50 Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com









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FDD5N50 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDD5N50TM_WS
Top Mark
FDD5N50
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC-
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC-
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA3
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 32 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 4 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Min.
500
-
-
.0
-
-
-
-
-
-1
-
-
-1
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.15
4.3
480
66
5
1
3
5
3
22
28
20
-
-
-
300
1.8
Max. Unit
-
-
1
10
±100
V
V/oC
μA
nA
5.0 V
1.4 Ω
-S
640 pF
88 pF
8 pF
15 nC
- nC
- nC
36 ns
54 ns
66 ns
50 ns
4A
16 A
1.4 V
- ns
- μC
©2008 Fairchild Semiconductor Corporation
FDD5N50 Rev. C1
2
www.fairchildsemi.com









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FDD5N50 Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 VGS = 15.0V
10 10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.04
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
2.0 VGS = 10V
1.5 VGS = 20V
1.0
0
*Note: TJ = 25oC
369
ID, Drain Current [A]
12
Figure 5. Capacitance Characteristics
1000
750
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
250
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
20
10
150oC
25oC
1
-55oC
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
70
150oC
10
25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 *Note: ID = 5A
0 4 8 12
Qg, Total Gate Charge [nC]
©2008 Fairchild Semiconductor Corporation
FDD5N50 Rev. C1
3
www.fairchildsemi.com










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