C5030 PDF даташит
Спецификация C5030 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5030». |
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Детали детали
Номер произв | C5030 |
Описание | NPN Transistor - 2SC5030 |
Производители | Toshiba Semiconductor |
логотип |
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications
Medium Power Amplifier Applications
2SC5030
Unit: mm
• High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 4 A, IB = 40 mA)
• High collector power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics Sy
mbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC I
Collector current
Pulse
(Note)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO 20
VEBO
C
ICP
IB
PC 1.
Tj
Tstg
50
40
8
5
8
0.5
3
150
−55 to 150
V
V
V
A
A
W
°C
°C
Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
―
JEITA
―
TOSHIBA 2-
8M1A
Weight: 0.55 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Sy
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
mbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 50 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 40 mA
VCE = 2 V, IC = 4 A
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 100
nA
― ― 100
nA
20 ― ― V
800 ― 3200
250 ―
―
― ― 0. 5 V
― ― 1. 2 V
― 150
― MH z
― 45
― pF
1 2004-07-26
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Marking
C5030
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5030
2 2004-07-26
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10
50 40 30
8
6
IC – VCE
Common emitter
20 Ta = 25°C
10
5
4
2
2
IB = 0.5 mA
0
0 12
3 45
6
Collector-emitter voltage VCE (V)
2SC5030
IC – VBE
8
Common emitter
VCE = 2 V
6
4 Ta = 125°C
2 25 −40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
10000
3000
1000
hFE – IC
Ta = 125°C
25
−40
300
100
30
0.01
Common emitter
VCE = 2 V
0.03 1 0.1
0.3
3 10
Collector current I C (A )
5
3 Common emitter
IC/IB = 200
1
VCE (sat) – IC
0.3
0.1 Ta = 125°C
0.03
0.01
0.01
25
−40
0.03
0.1 0
.3
1
Collector current I C (A )
3
10
10
3
1
25
0.3
0.1
VBE (sat) – IC
Common emitter
IC/IB = 200
Ta = −40°C
125
0.03
0.01
0.01
0.03 0.3 0.1 10
13
Collector current I C (A )
PC – Ta
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50
75 1 100 125
50 175
Ambient temperature Ta (°C)
3 2004-07-26
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